Assignee
WEI ANDY
DE·11 granted patents·2 pending applications·107 citations·filing 2007–2012
Top patents by PatentIndex Score
13 records- 0197US8298885B2Semiconductor device comprising metal gates and a silicon containing resistor formed on an isolation structureWEI ANDY·Filed 2010·Granted Oct 30, 2012·35 cites·16 claims
- 0295US8114746B2Method for forming double gate and tri-gate transistors on a bulk substrateWEI ANDY·Filed 2009·Granted Feb 14, 2012·38 cites·28 claims
- 0385US8652889B2Fin-transistor formed on a patterned STI region by late fin etchWEI ANDY·Filed 2012·Granted Feb 18, 2014·8 cites·17 claims
- 0484US8614123B2Method of forming a semiconductor device by using sacrificial gate electrodes and sacrificial self-aligned contact structuresWEI ANDY·Filed 2011·Granted Dec 24, 2013·7 cites·20 claims
- 0582US8679924B2Self-aligned multiple gate transistor formed on a bulk substrateWEI ANDY·Filed 2011·Granted Mar 25, 2014·7 cites·14 claims
- 0676US8390127B2Contact trenches for enhancing stress transfer in closely spaced transistorsWEI ANDY·Filed 2009·Granted Mar 5, 2013·7 cites·22 claims
- 0766US8497554B2Semiconductor device comprising metal gate structures formed by a replacement gate approach and efuses including a silicideWEI ANDY·Filed 2010·Granted Jul 30, 2013·2 cites·20 claims
- 0863US9450073B2SOI transistor having drain and source regions of reduced length and a stressed dielectric material adjacent theretoWEI ANDY·Filed 2007·Granted Sep 20, 2016·2 cites·23 claims
- 0961US8440516B2Method of forming a field effect transistorWEI ANDY·Filed 2010·Granted May 14, 2013·1 cites·8 claims
- 1049US9023712B2Method for self-aligned removal of a high-K gate dielectric above an STI regionWEI ANDY·Filed 2008·Granted May 5, 2015·0 cites·20 claims
- 1146US8274120B2Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regionsWEI ANDY·Filed 2010·Granted Sep 25, 2012·0 cites·11 claims
- 1246US2008268597A1Technique for enhancing dopant activation by using multiple sequential advanced laser/flash anneal processesWEI ANDY·Filed 2007·Application pending·0 cites
- 1341US2008003783A1Method of reducing a roughness of a semiconductor surfaceWEI ANDY·Filed 2007·Application pending·0 cites
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