Assignee
XIAMEN SANAN INTEGRATED CIRCUIT CO LTD
CN·15 granted patents·20 pending applications·7 citations·filing 2018–2025
Top patents by PatentIndex Score
35 records- 0190US11955518B2Epitaxial structure and transistor including the sameXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Apr 9, 2024·2 cites·20 claims
- 0287US10283935B1Consumer semiconductor laserXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2018·Granted May 7, 2019·5 cites·17 claims
- 0379US12199145B2Epitaxial structure and transistor including the sameXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2024·Granted Jan 14, 2025·0 cites·20 claims
- 0462US2024087877A1Backside metallized compound semiconductor device and method for manufacturing the sameXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2023·Application pending·0 cites
- 0559US2024258395A1Ohmic contact structure and manufacturing method therefor, and application thereofXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 0657US2026075891A1Heterojunction bipolar transistor, radio frequency module, and communication deviceXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2025·Application pending·0 cites
- 0755US2022393432A1Bragg grating and method for manufacturing the same and distributed feedback laser deviceXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2022·Application pending·0 cites
- 0855US2023387232A1Radio frequency device and radio frequency front-end apparatusXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2023·Application pending·0 cites
- 0955US2025201737A1Semiconductor chip and semiconductor componentXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 1052US12191376B2Power device and method for making the sameXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Jan 7, 2025·0 cites·27 claims
- 1152US11823891B2Backside metallized compound semiconductor device and method for manufacturing the sameXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2020·Granted Nov 21, 2023·0 cites·17 claims
- 1252US2023290837A1Group iii-v compound semiconductor device and passivation structure adapted thereinXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2023·Application pending·0 cites
- 1351US12317564B2Gallium nitride-based compound semiconductor deviceXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted May 27, 2025·0 cites·8 claims
- 1451US11862680B2Electrostatic discharge protection structure, nitride-based device having the same and method for manufacturing nitride-based deviceXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Jan 2, 2024·0 cites·15 claims
- 1551US11183586B2Cascode transistor deviceXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2019·Granted Nov 23, 2021·0 cites·15 claims
- 1651US2024429295A1Gallium nitride-based device and method for manufacturing the sameXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 1750US2024347485A1Microwave integrated circuit and manufacturing method of the sameXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 1849US12550411B2High electron mobility transistor device and method of making the sameXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Feb 10, 2026·0 cites·20 claims
- 1949US2023387290A1Silicon carbide metal oxide semiconductor field effect transistor deviceXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2023·Application pending·0 cites
- 2049US2022181846A1Optical modulator and method for manufacturing the sameXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2022·Application pending·0 cites
- 2148US2025338528A1High electron mobility transistor device and method for manufacturing the sameXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 2247US12453183B2Semiconductor device with low potential terminals connected to wellsXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Oct 21, 2025·0 cites·12 claims
- 2347US2024128337A1Semiconductor transistor and manufacturing method thereforXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2023·Application pending·0 cites
- 2445US2024313088A1Integrated semiconductor structure and method for making the sameXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 2545US2025132215A1Semiconductor deviceXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 2644US2025151360A1High electron mobility transistor deviceXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 2744US2025151311A1Semiconductor deviceXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 2843US11869969B2Semiconductor device and method for manufacturing the sameXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Jan 9, 2024·0 cites·11 claims
- 2941US11264231B2Method for manufacturing backside metalized compound semiconductor waferXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2020·Granted Mar 1, 2022·0 cites·20 claims
- 3039US11508837B2Epitaxial structure for high-electron-mobility transistor and method for manufacturing the sameXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2020·Granted Nov 22, 2022·0 cites·20 claims
- 3136US2023179169A1Surface acoustic wave deviceXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2021·Application pending·0 cites
- 3235US2020365705A1Method of forming ohmic contact for gallium nitride-based compound semiconductor device and gallium nitride-based compound semiconductor deviceXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2020·Application pending·0 cites
- 3334US11088270B2Microwave transistor with a patterned gate structure and manufacturing method thereofXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2018·Granted Aug 10, 2021·0 cites·15 claims
- 3434US10910791B2Low speckle laser array and image display thereofXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2019·Granted Feb 2, 2021·0 cites·20 claims
- 3534US2019140046A1Silicon carbide power device employing heterojunction terminal and manufacturing method thereofXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2018·Application pending·0 cites
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