Assignee
XIONG WEIZE
US·5 granted patents·3 pending applications·21 citations·filing 2007–2012
Top patents by PatentIndex Score
8 records- 0187US8138035B2Method for forming integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channelsXIONG WEIZE·Filed 2011·Granted Mar 20, 2012·7 cites·14 claims
- 0283US8114727B2Disposable spacer integration with stress memorization technique and silicon-germaniumXIONG WEIZE·Filed 2009·Granted Feb 14, 2012·10 cites·11 claims
- 0365US8470707B2Silicide methodXIONG WEIZE·Filed 2011·Granted Jun 25, 2013·2 cites·13 claims
- 0465US8410519B2Integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channelsXIONG WEIZE·Filed 2012·Granted Apr 2, 2013·1 cites·19 claims
- 0558US8067792B2Memory device with memory cell including MuGFET and FIN capacitorXIONG WEIZE·Filed 2009·Granted Nov 29, 2011·1 cites·14 claims
- 0641US2009142915A1Gate structure and method of forming the sameXIONG WEIZE·Filed 2007·Application pending·0 cites
- 0740US2008303095A1Varying mugfet width to adjust device characteristicsXIONG WEIZE·Filed 2007·Application pending·0 cites
- 0836US2012280324A1Sram structure and process with improved stabilityXIONG WEIZE·Filed 2011·Application pending·0 cites
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