Assignee
YANG FRANK BIN
US·3 granted patents·33 citations·filing 2009–2010
Top patents by PatentIndex Score
3 records- 0192US8076209B2Methods for fabricating MOS devices having highly stressed channelsYANG FRANK BIN·Filed 2010·Granted Dec 13, 2011·17 cites·20 claims
- 0286US8120120B2Embedded silicon germanium source drain structure with reduced silicide encroachment and contact resistance and enhanced channel mobilityYANG FRANK BIN·Filed 2009·Granted Feb 21, 2012·16 cites·18 claims
- 0346US8193592B2MOSFET with asymmetrical extension implantYANG FRANK BIN·Filed 2010·Granted Jun 5, 2012·0 cites·20 claims
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