Assignee

YANG HEE-JUN

KR·2 granted patents·24 citations·filing 2011–2012

Technology mixH10D2 B82Y1 H01L1 H10P1 Y10S1

Top patents by PatentIndex Score

2 records

0193US8912530B2Electrode structure including graphene and field effect transistor having the sameYANG HEE-JUN·Filed 2012·Granted Dec 16, 2014·20 cites·25 claims
0278US8592799B2Graphene electronic device and method of fabricating the sameYANG HEE-JUN·Filed 2011·Granted Nov 26, 2013·4 cites·6 claims

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