Assignee
YANG HONGNING
US·22 granted patents·157 citations·filing 2010–2015
Top patents by PatentIndex Score
22 records- 0196US8541862B2Semiconductor device with self-biased isolationYANG HONGNING·Filed 2011·Granted Sep 24, 2013·23 cites·16 claims
- 0295US9306060B1Semiconductor devices and related fabrication methodsYANG HONGNING·Filed 2014·Granted Apr 5, 2016·19 cites·20 claims
- 0394US8247869B2LDMOS transistors with a split gateYANG HONGNING·Filed 2010·Granted Aug 21, 2012·19 cites·16 claims
- 0493US8772871B2Partially depleted dielectric resurf LDMOSYANG HONGNING·Filed 2010·Granted Jul 8, 2014·16 cites·20 claims
- 0593US8575692B2Near zero channel length field drift LDMOSYANG HONGNING·Filed 2011·Granted Nov 5, 2013·14 cites·19 claims
- 0692US9165918B1Composite semiconductor device with multiple threshold voltagesYANG HONGNING·Filed 2014·Granted Oct 20, 2015·17 cites·20 claims
- 0788US9231083B2High breakdown voltage LDMOS deviceYANG HONGNING·Filed 2012·Granted Jan 5, 2016·8 cites·14 claims
- 0885US9136323B2Drain-end drift diminution in semiconductor devicesYANG HONGNING·Filed 2014·Granted Sep 15, 2015·6 cites·20 claims
- 0985US8853780B2Semiconductor device with drain-end drift diminutionYANG HONGNING·Filed 2012·Granted Oct 7, 2014·7 cites·19 claims
- 1082US9490322B2Semiconductor device with enhanced 3D resurfYANG HONGNING·Filed 2013·Granted Nov 8, 2016·5 cites·20 claims
- 1181US9601595B2High breakdown voltage LDMOS deviceYANG HONGNING·Filed 2015·Granted Mar 21, 2017·3 cites·15 claims
- 1281US8652930B2Semiconductor device with self-biased isolationYANG HONGNING·Filed 2013·Granted Feb 18, 2014·4 cites·20 claims
- 1378US9105657B2Methods for producing near zero channel length field drift LDMOSYANG HONGNING·Filed 2013·Granted Aug 11, 2015·3 cites·20 claims
- 1474US8227861B2Multi-gate semiconductor devicesYANG HONGNING·Filed 2010·Granted Jul 24, 2012·4 cites·16 claims
- 1573US9543379B2Semiconductor device with peripheral breakdown protectionYANG HONGNING·Filed 2014·Granted Jan 10, 2017·3 cites·18 claims
- 1672US9070576B2Semiconductor device and related fabrication methodsYANG HONGNING·Filed 2012·Granted Jun 30, 2015·3 cites·17 claims
- 1768US8847312B2LDMOS device and method for improved SOAYANG HONGNING·Filed 2012·Granted Sep 30, 2014·2 cites·20 claims
- 1863US8748981B2Semiconductor device and related fabrication methodsYANG HONGNING·Filed 2012·Granted Jun 10, 2014·1 cites·16 claims
- 1953US9000518B2Semiconductor device and related fabrication methodsYANG HONGNING·Filed 2014·Granted Apr 7, 2015·0 cites·18 claims
- 2047US8513734B2Switch mode converter employing dual gate MOS transistorYANG HONGNING·Filed 2011·Granted Aug 20, 2013·0 cites·19 claims
- 2145US9385229B2Semiconductor device with improved breakdown voltageYANG HONGNING·Filed 2014·Granted Jul 5, 2016·0 cites·19 claims
- 2242US9478456B2Semiconductor device with composite drift regionYANG HONGNING·Filed 2012·Granted Oct 25, 2016·0 cites·18 claims
Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →