Assignee
YANG JENG-JIUN
US·3 granted patents·127 citations·filing 2009–2012
Top patents by PatentIndex Score
3 records- 0197US8163619B2Fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zoneYANG JENG-JIUN·Filed 2009·Granted Apr 24, 2012·121 cites·46 claims
- 0282US8415752B2Configuration and fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zoneYANG JENG-JIUN·Filed 2012·Granted Apr 9, 2013·5 cites·30 claims
- 0361US8304308B2Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link lengthYANG JENG-JIUN·Filed 2011·Granted Nov 6, 2012·1 cites·9 claims
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