Assignee
YANG JIANHUA
US·34 granted patents·8 pending applications·177 citations·filing 2008–2024
Top patents by PatentIndex Score
42 records- 0195US8415652B2Memristors with a switching layer comprising a composite of multiple phasesYANG JIANHUA·Filed 2010·Granted Apr 9, 2013·21 cites·17 claims
- 0292US8546785B2Memristive deviceYANG JIANHUA·Filed 2010·Granted Oct 1, 2013·14 cites·12 claims
- 0392US8325507B2Memristors with an electrode metal reservoir for dopantsYANG JIANHUA·Filed 2010·Granted Dec 4, 2012·15 cites·20 claims
- 0489US8575585B2Memristive deviceYANG JIANHUA·Filed 2009·Granted Nov 5, 2013·18 cites·15 claims
- 0588USD1050551SHold the moon astronaut projection lampYANG JIANHUA·Filed 2024·Granted Nov 5, 2024·9 cites·1 claims
- 0688US9082533B2Memristive element based on hetero-junction oxideYANG JIANHUA·Filed 2011·Granted Jul 14, 2015·7 cites·22 claims
- 0787US8921960B2Memristor cell structures for high density arraysYANG JIANHUA·Filed 2012·Granted Dec 30, 2014·8 cites·19 claims
- 0886US8259485B2Multilayer structures having memory elements with varied resistance of switching layersYANG JIANHUA·Filed 2010·Granted Sep 4, 2012·9 cites·21 claims
- 0985USD1053425SHold the moon astronaut projection lampYANG JIANHUA·Filed 2024·Granted Dec 3, 2024·7 cites·1 claims
- 1082US8737113B2Memory resistor having multi-layer electrodesYANG JIANHUA·Filed 2010·Granted May 27, 2014·6 cites·16 claims
- 1181US9224949B2Memristive elements that exhibit minimal sneak path currentYANG JIANHUA·Filed 2011·Granted Dec 29, 2015·6 cites·6 claims
- 1281US8766228B2Electrically actuated device and method of controlling the formation of dopants thereinYANG JIANHUA·Filed 2008·Granted Jul 1, 2014·7 cites·11 claims
- 1371US8487289B2Electrically actuated deviceYANG JIANHUA·Filed 2010·Granted Jul 16, 2013·3 cites·17 claims
- 1471USD667232SOffice chairYANG JIANHUA·Filed 2011·Granted Sep 18, 2012·17 cites·1 claims
- 1570US8767438B2Memelectronic deviceYANG JIANHUA·Filed 2012·Granted Jul 1, 2014·4 cites·20 claims
- 1670US8530873B2Electroforming free memristor and method for fabricating thereofYANG JIANHUA·Filed 2010·Granted Sep 10, 2013·2 cites·15 claims
- 1768US8710483B2Memristive junction with intrinsic rectifierYANG JIANHUA·Filed 2009·Granted Apr 29, 2014·3 cites·15 claims
- 1865USD936421SCake turntableYANG JIANHUA·Filed 2021·Granted Nov 23, 2021·7 cites·1 claims
- 1965US8207520B2Programmable crosspoint device with an integral diodeYANG JIANHUA·Filed 2010·Granted Jun 26, 2012·2 cites·11 claims
- 2064US8710865B2Field-programmable analog array with memristorsYANG JIANHUA·Filed 2011·Granted Apr 29, 2014·2 cites·16 claims
- 2163US8519372B2Electroforming-free nanoscale switching deviceYANG JIANHUA·Filed 2009·Granted Aug 27, 2013·2 cites·12 claims
- 2259US8872153B2Device structure for long endurance memristorsYANG JIANHUA·Filed 2010·Granted Oct 28, 2014·2 cites·13 claims
- 2357US8437072B2Individually addressable nano-scale mechanical actuatorsYANG JIANHUA·Filed 2009·Granted May 7, 2013·0 cites·15 claims
- 2449USD673384SOffice chairYANG JIANHUA·Filed 2011·Granted Jan 1, 2013·6 cites·1 claims
- 2548US2013309229A1Recombinant t cell ligands and antibodies that bind b cells for the treatment of autoimmune diseasesYANG JIANHUA·Filed 2012·Application pending·0 cites
- 2647US8982601B2Switchable junction with an intrinsic diode formed with a voltage dependent resistorYANG JIANHUA·Filed 2009·Granted Mar 17, 2015·0 cites·19 claims
- 2745US8587985B2Memory array with graded resistance linesYANG JIANHUA·Filed 2010·Granted Nov 19, 2013·0 cites·18 claims
- 2844US9885937B2Dynamic optical crossbar arrayYANG JIANHUA·Filed 2011·Granted Feb 6, 2018·0 cites·13 claims
- 2944US2015053909A1Nonlinear memristorsYANG JIANHUA·Filed 2012·Application pending·0 cites
- 3043US9159476B2Negative differential resistance deviceYANG JIANHUA·Filed 2011·Granted Oct 13, 2015·0 cites·15 claims
- 3143US2011121359A1Multi-Layer Reconfigurable SwitchesYANG JIANHUA·Filed 2008·Application pending·0 cites
- 3243US2011260134A1Thermally Stable Nanoscale Switching DeviceYANG JIANHUA·Filed 2009·Application pending·0 cites
- 3343US2013026434A1Memristor with controlled electrode grain sizeYANG JIANHUA·Filed 2010·Application pending·0 cites
- 3442US8912520B2Nanoscale switching deviceYANG JIANHUA·Filed 2010·Granted Dec 16, 2014·0 cites·20 claims
- 3541US2014158973A1Nitride-based memristorsYANG JIANHUA·Filed 2011·Application pending·0 cites
- 3640US8879300B2Switchable two-terminal devices with diffusion/drift speciesYANG JIANHUA·Filed 2010·Granted Nov 4, 2014·0 cites·15 claims
- 3738US9257645B2Memristors having mixed oxide phasesYANG JIANHUA·Filed 2011·Granted Feb 9, 2016·0 cites·16 claims
- 3838US2012012809A1Switchable Junction with Intrinsic Diodes with Different Switching ThresholdYANG JIANHUA·Filed 2009·Application pending·0 cites
- 3938US2012018698A1Low-power nanoscale switching device with an amorphous switching materialYANG JIANHUA·Filed 2009·Application pending·0 cites
- 4037US8570138B2Resistive switchesYANG JIANHUA·Filed 2010·Granted Oct 29, 2013·0 cites·14 claims
- 4134US9184213B2Nanoscale switching deviceYANG JIANHUA·Filed 2010·Granted Nov 10, 2015·0 cites·20 claims
- 4233US9024285B2Nanoscale switching devices with partially oxidized electrodesYANG JIANHUA·Filed 2010·Granted May 5, 2015·0 cites·13 claims
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