Assignee
YANG JONG-IN
KR·6 granted patents·17 citations·filing 2006–2012
Top patents by PatentIndex Score
6 records- 0194US8872205B2Semiconductor light-emitting device and method of manufacturing the sameYANG JONG-IN·Filed 2011·Granted Oct 28, 2014·9 cites·8 claims
- 0276US8932891B2Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based semiconductor deviceYANG JONG IN·Filed 2006·Granted Jan 13, 2015·2 cites·5 claims
- 0376US8110417B2Method of forming pattern on group III nitride semiconductor substrate and method of manufacturing group III nitride semiconductor light emitting deviceYANG JONG IN·Filed 2010·Granted Feb 7, 2012·3 cites·9 claims
- 0468US8110424B2Surface treatment method of group III nitride semiconductor and manufacturing method of the group III nitride semiconductorYANG JONG IN·Filed 2009·Granted Feb 7, 2012·2 cites·14 claims
- 0565US8476639B2Group III nitride semiconductor and group III nitride semiconductor structureYANG JONG IN·Filed 2011·Granted Jul 2, 2013·1 cites·12 claims
- 0640US8829548B2Light emitting device package and fabrication method thereofYANG JONG IN·Filed 2012·Granted Sep 9, 2014·0 cites·14 claims
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