Assignee
YI JUN SIN
KR·1 granted patent·1 pending application·0 citations·filing 2009–2010
Top patents by PatentIndex Score
2 records- 0142US8110485B2Nanocrystal silicon layer structures formed using plasma deposition technique, methods of forming the same, nonvolatile memory devices having the nanocrystal silicon layer structures, and methods of fabricating the nonvolatile memory devicesYI JUN SIN·Filed 2009·Granted Feb 7, 2012·0 cites·10 claims
- 0239US2011155204A1Wire type thin film solar cell and method of manufacturing the sameYI JUN SIN·Filed 2010·Application pending·0 cites
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