Assignee
YOSHIKAWA KOH
JP·14 granted patents·33 citations·filing 2007–2012
Technology mixH10D14
Top patents by PatentIndex Score
14 records- 0185US8278682B2Semiconductor deviceYOSHIKAWA KOH·Filed 2011·Granted Oct 2, 2012·9 cites·20 claims
- 0281US8618557B2Wide-band-gap reverse-blocking MOS-type semiconductor deviceYOSHIKAWA KOH·Filed 2012·Granted Dec 31, 2013·6 cites·12 claims
- 0372US8258032B2Power semiconductor devices and methods for manufacturing the sameYOSHIKAWA KOH·Filed 2009·Granted Sep 4, 2012·4 cites·13 claims
- 0468US8334565B2Trench type insulated gate MOS semiconductor deviceYOSHIKAWA KOH·Filed 2008·Granted Dec 18, 2012·4 cites·22 claims
- 0563US8558342B2Semiconductor deviceYOSHIKAWA KOH·Filed 2010·Granted Oct 15, 2013·2 cites·7 claims
- 0663US8334581B2Semiconductor device exhibiting withstand voltages in the forward and reverse directionsYOSHIKAWA KOH·Filed 2010·Granted Dec 18, 2012·2 cites·7 claims
- 0762US8138542B2Semiconductor device and manufacturing method of the semiconductor deviceYOSHIKAWA KOH·Filed 2009·Granted Mar 20, 2012·2 cites·4 claims
- 0860US8089094B2Semiconductor deviceYOSHIKAWA KOH·Filed 2009·Granted Jan 3, 2012·2 cites·6 claims
- 0958US8809911B2Semiconductor deviceYOSHIKAWA KOH·Filed 2011·Granted Aug 19, 2014·1 cites·11 claims
- 1057US8089134B2Semiconductor deviceYOSHIKAWA KOH·Filed 2009·Granted Jan 3, 2012·1 cites·20 claims
- 1148US8742501B2Power semiconductor devices and methods for manufacturing the sameYOSHIKAWA KOH·Filed 2012·Granted Jun 3, 2014·0 cites·6 claims
- 1247US8125027B2Semiconductor device having trenches extending through channel regionsYOSHIKAWA KOH·Filed 2011·Granted Feb 28, 2012·0 cites·4 claims
- 1343US8242556B2Vertical and trench type insulated gate MOS semiconductor deviceYOSHIKAWA KOH·Filed 2010·Granted Aug 14, 2012·0 cites·2 claims
- 1440US8080846B2Semiconductor device having improved breakdown voltage and method of manufacturing the sameYOSHIKAWA KOH·Filed 2007·Granted Dec 20, 2011·0 cites·19 claims
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