Assignee
YOSHIZUMI YUSUKE
JP·15 granted patents·1 pending application·103 citations·filing 2008–2012
Top patents by PatentIndex Score
16 records- 0194US8227277B2Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2011·Granted Jul 24, 2012·15 cites·9 claims
- 0293US8389312B2Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2012·Granted Mar 5, 2013·13 cites·8 claims
- 0393US8265113B2Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2010·Granted Sep 11, 2012·14 cites·18 claims
- 0493US8175129B2Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and method of estimating damage from formation of scribe grooveYOSHIZUMI YUSUKE·Filed 2010·Granted May 8, 2012·14 cites·23 claims
- 0592US8306082B2Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2010·Granted Nov 6, 2012·12 cites·16 claims
- 0692US8304793B2III-nitride semiconductor optical device and epitaxial substrateYOSHIZUMI YUSUKE·Filed 2010·Granted Nov 6, 2012·13 cites·22 claims
- 0787US8546163B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2011·Granted Oct 1, 2013·6 cites·10 claims
- 0886US8741674B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2011·Granted Jun 3, 2014·6 cites·10 claims
- 0980US8507305B2Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and epitaxial substrateYOSHIZUMI YUSUKE·Filed 2012·Granted Aug 13, 2013·4 cites·16 claims
- 1074US8488642B2Gallium nitride based semiconductor light-emitting device and method for fabricating the same, gallium nitride based light-emitting diode, epitaxial wafer, and method for fabricating gallium nitride light-emitting diodeYOSHIZUMI YUSUKE·Filed 2011·Granted Jul 16, 2013·3 cites·30 claims
- 1174US8107507B2Group III nitride semiconductor element and epitaxial waferYOSHIZUMI YUSUKE·Filed 2010·Granted Jan 31, 2012·2 cites·23 claims
- 1262US8513645B2Gallium nitride-based epitaxial wafer and method of producing gallium nitride-based semiconductor light-emitting deviceYOSHIZUMI YUSUKE·Filed 2008·Granted Aug 20, 2013·1 cites·10 claims
- 1353US8391327B2Group III nitride semiconductor element and epitaxial waferYOSHIZUMI YUSUKE·Filed 2012·Granted Mar 5, 2013·0 cites·23 claims
- 1452US8693515B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2011·Granted Apr 8, 2014·0 cites·16 claims
- 1551US8541253B2III-nitride semiconductor laser device, and method of fabricating the III-nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2012·Granted Sep 24, 2013·0 cites·11 claims
- 1650US2012184057A1Iii-nitride semiconductor laser device, and method of fabricating the iii-nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2012·Application pending·0 cites
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