Inventor
PARK JONG-BONG
KR12 patents
⚠️ This page may combine multiple inventors who share the name “PARK JONG-BONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
8 patentsUS7144680B2Dec 5, 2006
Electron beam lithography method using new material
SAMSUNG ELECTRONICS CO LTD20 citations91
US7569846B2Aug 4, 2009
Phase-change memory device including nanowires and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD9 citations83
US7541199B2Jun 2, 2009
Methods of forming magnetic memory devices including oxidizing and etching magnetic layers
SAMSUNG ELECTRONICS CO LTD14 citations83
US7132710B2Nov 7, 2006
Capacitor, semiconductor device having the same, and method of manufacturing the semiconductor device
SAMSUNG ELECTRONICS CO LTD8 citations69
US7981750B2Jul 19, 2011
Methods of fabrication of channel-stressed semiconductor devices
SAMSUNG ELECTRONICS CO LTD6 citations62
US7655940B2Feb 2, 2010
Storage node including diffusion barrier layer, phase change memory device having the same and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations61
US7838422B2Nov 23, 2010
Al-doped charge trap layer, non-volatile memory device and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US8053366B2Nov 8, 2011
Al-doped charge trap layer and non-volatile memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations48