P

Inventor

TU CHIEN NAN

TW36 patents
⚠️ This page may combine multiple inventors who share the name “TU CHIEN NAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

34 patents
US9985072B1May 29, 2018

CMOS image sensor with dual damascene grid design having absorption enhancement structure

TAIWAN SEMICONDUCTOR MFG CO LTD21 citations94
US10553733B2Feb 4, 2020

QE approach by double-side, multi absorption structure

TAIWAN SEMICONDUCTOR MFG CO LTD12 citations93
US10510910B2Dec 17, 2019

Image sensor with an absorption enhancement semiconductor layer

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10157946B2Dec 18, 2018

Method for forming CMOS image sensor structure

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9818779B2Nov 14, 2017

CMOS image sensor structure

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10438980B2Oct 8, 2019

Image sensor with a high absorption layer

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US10211244B2Feb 19, 2019

Image sensor device with reflective structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US11996429B2May 28, 2024

CMOS image sensor structure with microstructures on backside surface of semiconductor layer

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11177302B2Nov 16, 2021

CMOS image sensor structure with microstructures formed on semiconductor layer

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10861988B2Dec 8, 2020

Image sensor with an absorption enhancement semiconductor layer

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10861989B2Dec 8, 2020

Image sensor with an absorption enhancement semiconductor layer

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10153319B2Dec 11, 2018

CMOS image sensor with dual damascene grid design having absorption enhancement structure

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9620553B2Apr 11, 2017

CMOS image sensor structure with crosstalk improvement

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9397130B1Jul 19, 2016

CMOS image sensor structure with crosstalk improvement

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11393937B2Jul 19, 2022

QE approach by double-side, multi absorption structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10879406B2Dec 29, 2020

QE approach by double-side, multi absorption structure

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US10868053B2Dec 15, 2020

Image sensor with a high absorption layer

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10056427B1Aug 21, 2018

Front side illuminated image sensor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11990493B2May 21, 2024

Image sensor device with reflective structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11830892B2Nov 28, 2023

Image sensor with a high absorption layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11342372B2May 24, 2022

Image sensor device with reflective layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12453203B2Oct 21, 2025

Deep trench isolation structures resistant to cracking

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11302734B2Apr 12, 2022

Deep trench isolation structures resistant to cracking

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12402422B2Aug 26, 2025

Near infrared light sensor with improved light coupling and CMOS image sensor including same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12490535B2Dec 2, 2025

CMOS image sensor and method for making the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US9620556B2Apr 11, 2017

Method for forming image-sensor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9269733B2Feb 23, 2016

Image sensor device with improved quantum efficiency

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9202837B2Dec 1, 2015

Image-sensor device and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10734427B2Aug 4, 2020

Method for forming image sensor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10707361B2Jul 7, 2020

QE approach by double-side, multi absorption structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10553628B2Feb 4, 2020

Image sensor with a high absorption layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10164141B2Dec 25, 2018

Image sensor device with damage reduction

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42
US10204959B2Feb 12, 2019

Semiconductor image sensing device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations38
US9721983B2Aug 1, 2017

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations38

TAIWAN SEMICONDUCTOR MFG

1 patent

TAIWAN SEMICONDUCTOR MFG COMPANY LTD

1 patent