Inventor
TU CHIEN NAN
TW36 patents
⚠️ This page may combine multiple inventors who share the name “TU CHIEN NAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
34 patentsUS9985072B1May 29, 2018
CMOS image sensor with dual damascene grid design having absorption enhancement structure
TAIWAN SEMICONDUCTOR MFG CO LTD21 citations94
US10553733B2Feb 4, 2020
QE approach by double-side, multi absorption structure
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations93
US10510910B2Dec 17, 2019
Image sensor with an absorption enhancement semiconductor layer
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10157946B2Dec 18, 2018
Method for forming CMOS image sensor structure
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9818779B2Nov 14, 2017
CMOS image sensor structure
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10438980B2Oct 8, 2019
Image sensor with a high absorption layer
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US10211244B2Feb 19, 2019
Image sensor device with reflective structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US11996429B2May 28, 2024
CMOS image sensor structure with microstructures on backside surface of semiconductor layer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11177302B2Nov 16, 2021
CMOS image sensor structure with microstructures formed on semiconductor layer
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10861988B2Dec 8, 2020
Image sensor with an absorption enhancement semiconductor layer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10861989B2Dec 8, 2020
Image sensor with an absorption enhancement semiconductor layer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10153319B2Dec 11, 2018
CMOS image sensor with dual damascene grid design having absorption enhancement structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9620553B2Apr 11, 2017
CMOS image sensor structure with crosstalk improvement
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9397130B1Jul 19, 2016
CMOS image sensor structure with crosstalk improvement
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11393937B2Jul 19, 2022
QE approach by double-side, multi absorption structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10879406B2Dec 29, 2020
QE approach by double-side, multi absorption structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US10868053B2Dec 15, 2020
Image sensor with a high absorption layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10056427B1Aug 21, 2018
Front side illuminated image sensor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11990493B2May 21, 2024
Image sensor device with reflective structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11830892B2Nov 28, 2023
Image sensor with a high absorption layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11342372B2May 24, 2022
Image sensor device with reflective layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12453203B2Oct 21, 2025
Deep trench isolation structures resistant to cracking
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11302734B2Apr 12, 2022
Deep trench isolation structures resistant to cracking
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12402422B2Aug 26, 2025
Near infrared light sensor with improved light coupling and CMOS image sensor including same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12490535B2Dec 2, 2025
CMOS image sensor and method for making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US9620556B2Apr 11, 2017
Method for forming image-sensor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9269733B2Feb 23, 2016
Image sensor device with improved quantum efficiency
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9202837B2Dec 1, 2015
Image-sensor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10734427B2Aug 4, 2020
Method for forming image sensor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10707361B2Jul 7, 2020
QE approach by double-side, multi absorption structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10553628B2Feb 4, 2020
Image sensor with a high absorption layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10164141B2Dec 25, 2018
Image sensor device with damage reduction
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42
US10204959B2Feb 12, 2019
Semiconductor image sensing device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations38
US9721983B2Aug 1, 2017
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations38