Inventor
WU MING-CHI
TW27 patents
⚠️ This page may combine multiple inventors who share the name “WU MING-CHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
25 patentsUS9985072B1May 29, 2018
CMOS image sensor with dual damascene grid design having absorption enhancement structure
TAIWAN SEMICONDUCTOR MFG CO LTD21 citations94
US10553733B2Feb 4, 2020
QE approach by double-side, multi absorption structure
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations93
US10510910B2Dec 17, 2019
Image sensor with an absorption enhancement semiconductor layer
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10438980B2Oct 8, 2019
Image sensor with a high absorption layer
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US10211244B2Feb 19, 2019
Image sensor device with reflective structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US10861988B2Dec 8, 2020
Image sensor with an absorption enhancement semiconductor layer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10861989B2Dec 8, 2020
Image sensor with an absorption enhancement semiconductor layer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10153319B2Dec 11, 2018
CMOS image sensor with dual damascene grid design having absorption enhancement structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11393937B2Jul 19, 2022
QE approach by double-side, multi absorption structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10879406B2Dec 29, 2020
QE approach by double-side, multi absorption structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US10868053B2Dec 15, 2020
Image sensor with a high absorption layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10056427B1Aug 21, 2018
Front side illuminated image sensor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US10784150B2Sep 22, 2020
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US11990493B2May 21, 2024
Image sensor device with reflective structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11830892B2Nov 28, 2023
Image sensor with a high absorption layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11342372B2May 24, 2022
Image sensor device with reflective layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9502556B2Nov 22, 2016
Integrated fabrication of semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations62
US12453203B2Oct 21, 2025
Deep trench isolation structures resistant to cracking
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11302734B2Apr 12, 2022
Deep trench isolation structures resistant to cracking
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US9984918B2May 29, 2018
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10734427B2Aug 4, 2020
Method for forming image sensor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10707361B2Jul 7, 2020
QE approach by double-side, multi absorption structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10553628B2Feb 4, 2020
Image sensor with a high absorption layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10276427B2Apr 30, 2019
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12368070B2Jul 22, 2025
LDMOS device having isolation regions comprising DTI regions extending from a bottom of STI region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49