Inventor

HEINEMANN BERND

DE19 patents

⚠️ This page may combine multiple inventors who share the name “HEINEMANN BERND”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HEINEMANN BERND

IHP GMBH

DMOS transistor

Silicon germanium hetero bipolar transistor having a germanium concentration profile in the base layer

Silicon-germanium hetero bipolar transistor with T-shaped implantation layer between emitter and emitter contact area

BiCMOS structure, method for producing the same and bipolar transistor for a BiCMOS structure

Method for producing high-speed vertical npn bipolar transistors and complementary MOS transistors on a chip

Cmos-compatible lateral dmos transistor and method for producing such a transistor

Semiconductor device and method for production thereof

Layers in substrate wafers

INST HALBLEITERPHYSIK GMBH

Bipolar transistor and method for producing same

Vertical bipolar transistor

Bipolar transistor and method for producing same

NOKIA CORP

Silicon germanium hetero bipolar transistor

IHP GMBH & MDASH INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS LEIBNIZ INST FUR INNOVATIV MIKROE

Complementary bipolar semiconductor device

IHP GMBH & MDASH INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS LEIBNIZ INST FUR INNOVATIVE MIKRO

Vertical bipolar transistor

IHP GMBH & MDASH INNOVATIONS F

Bipolar transistor with raised base connection region and process for the production thereof

FOX ALEXANDER

Bipolar transistor having self-adjusted emitter contact

IHP GMBH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUR INNOVATIVE MI

Method for fabricating a bipolar transistor having self-aligned emitter contact

INST HALBLEITERPHYSIK FRANFURT

Bipolar transistor and method for producing same

TILLACK BERND

Selective growth of polycrystalline silicon-containing semiconductor material on a silicon-containing semiconductor surface