Inventor
BASKAR VEERARAGHAVAN S
US3 patents
Patents
3 patentsUS10892193B2Jan 12, 2021
Controlling active fin height of FinFET device
IBM0 citations60
US10770361B2Sep 8, 2020
Controlling active fin height of FinFET device using etch protection layer to prevent recess of isolation layer during gate oxide removal
IBM0 citations49
US10665514B2May 26, 2020
Controlling active fin height of FinFET device using etch protection layer to prevent recess of isolation layer during gate oxide removal
IBM0 citations49