Inventor
ARNOLD JOHN CHRISTOPHER
US23 patents
⚠️ This page may combine multiple inventors who share the name “ARNOLD JOHN CHRISTOPHER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
17 patentsUS7550313B2Jun 23, 2009
Method for delineation of phase change memory (PCM) cells separated by PCM and upper electrode regions modified to have high film resistivity
IBM19 citations90
US7923712B2Apr 12, 2011
Phase change memory element with a peripheral connection to a thin film electrode
IBM17 citations83
US10032632B2Jul 24, 2018
Selective gas etching for self-aligned pattern transfer
IBM4 citations82
US12268031B2Apr 1, 2025
Backside power rails and power distribution network for density scaling
IBM2 citations74
US12550351B2Feb 10, 2026
Diffusion break between passive device and logic device with backside contact
IBM0 citations62
US12020949B2Jun 25, 2024
Subtractive patterning of interconnect structures
IBM0 citations62
US11189528B2Nov 30, 2021
Subtractive RIE interconnect
IBM1 citations62
US11688636B2Jun 27, 2023
Spin on scaffold film for forming topvia
IBM0 citations61
US8012811B2Sep 6, 2011
Methods of forming features in integrated circuits
IBM2 citations60
US12557353B2Feb 17, 2026
Method and structure for a logic device and another device
IBM0 citations52
US12527068B2Jan 13, 2026
Two-dimensional self-aligned backside via-to-backside power rail (VBPR)
IBM0 citations52
US12489035B2Dec 2, 2025
Semiconductor passive device integration for silicon-on-insulator substrate
IBM0 citations52
US11195995B2Dec 7, 2021
Back-end-of-line compatible processing for forming an array of pillars
IBM0 citations52
US11189527B2Nov 30, 2021
Self-aligned top vias over metal lines formed by a damascene process
IBM0 citations51
US10559467B2Feb 11, 2020
Selective gas etching for self-aligned pattern transfer
IBM0 citations51
US12272545B2Apr 8, 2025
Embedded metal contamination removal from BEOL wafers
IBM0 citations50
US7642549B2Jan 5, 2010
Phase change memory cells delineated by regions of modified film resistivity
IBM0 citations50