Inventor
PARK KWANGWUK
KR6 patents
Patents
6 patentsUS11735498B2Aug 22, 2023
Through via electrode and device isolation structure including oxide layer pattern and nitride layer pattern sequentially stacked on inner surface of trench
SAMSUNG ELECTRONICS CO LTD4 citations72
US11380606B2Jul 5, 2022
Semiconductor device including via structure with head and body portions
SAMSUNG ELECTRONICS CO LTD3 citations69
US11848285B2Dec 19, 2023
Semiconductor chip including buried dielectric pattern at edge region, semiconductor package including the same, and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11791242B2Oct 17, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations60
US11798866B2Oct 24, 2023
Semiconductor device including via structures with undercut portions and semiconductor package including the same
SAMSUNG ELECTRONICS CO LTD0 citations59
US11749614B2Sep 5, 2023
Through-silicon via (TSV) key for overlay measurement, and semiconductor device and semiconductor package including TSV key
SAMSUNG ELECTRONICS CO LTD0 citations52