Inventor
SAMESHIMA TOSHIYUKI
JP21 patents
⚠️ This page may combine multiple inventors who share the name “SAMESHIMA TOSHIYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SONY CORP
15 patentsUS5304250AApr 19, 1994
Plasma system comprising hollow mesh plate electrode
SONY CORP219 citations99
US5145808ASep 8, 1992
Method of crystallizing a semiconductor thin film
SONY CORP294 citations99
US5648276AJul 15, 1997
Method and apparatus for fabricating a thin film semiconductor device
SONY CORP274 citations98
US5608231AMar 4, 1997
Field effect transistor having channel with plural quantum boxes arranged in a common plane
SONY CORP79 citations96
US6458715B2Oct 1, 2002
Process of manufacturing semiconductor device
SONY CORP15 citations92
US6291366B1Sep 18, 2001
Process of manufacturing semiconductor devices
SONY CORP22 citations92
US5910015AJun 8, 1999
Thin film transistor and manufacturing method of the thin film transistor
SONY CORP28 citations92
US5726487AMar 10, 1998
Semiconductor device having an improved thin film transistor
SONY CORP20 citations92
US5591653AJan 7, 1997
Method of manufacturing Si-Ge thin film transistor
SONY CORP41 citations92
US5894159AApr 13, 1999
Semiconductor device having first and second insulating layers
SONY CORP13 citations74
US5889292AMar 30, 1999
Semiconductor device having an improved thin film transistor
SONY CORP12 citations74
US5804454ASep 8, 1998
Insulation film-forming method for semiconductor device manufacturing wherein SiOx (O≦x≦1.8) is evaporated
SONY CORP10 citations74
US5561088AOct 1, 1996
Heating method and manufacturing method for semiconductor device
SONY CORP13 citations74
US5446304AAug 29, 1995
Insulated-gate-type field effect transistor which has subgates that have different spacing from the substrate than the main gate
SONY CORP19 citations73
US5431126AJul 11, 1995
Method of forming semiconductor crystal and semiconductor device
SONY CORP4 citations60
SAMESHIMA TOSHIYUKI
2 patentsUS8258043B2Sep 4, 2012
Manufacturing method of thin film semiconductor substrate
SAMESHIMA TOSHIYUKI0 citations43
US9239299B2Jan 19, 2016
Photoinduced carrier lifetime measuring method, light incidence efficiency measuring method, photoinduced carrier lifetime measuring device, and light incidence efficiency measuring device
SAMESHIMA TOSHIYUKI0 citations36