Inventor

HATADE KAZUNARI

JP17 patents

⚠️ This page may combine multiple inventors who share the name “HATADE KAZUNARI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HATADE KAZUNARI

MITSUBISHI ELECTRIC CORP

Semiconductor device capable of avoiding latchup breakdown resulting from negative varation of floating offset voltage

Field effect semiconductor device

Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage

Semiconductor device

Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage

Semiconductor device having enhanced di/dt tolerance and dV/dt tolerance

Semiconductor device

Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage

Semiconductor device

Semiconductor device

Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage

Semiconductor device

Semiconductor device

Semiconductor device having spaced unit regions and heavily doped semiconductor layer

HATADE KAZUNARI

Semiconductor device

Semiconductor device with peripheral base region connected to main electrode

Semiconductor device