Inventor
LA ONE-GYUN
KR13 patents
Patents
13 patentsUS6728162B2Apr 27, 2004
Data input circuit and method for synchronous semiconductor memory device
SAMSUNG ELECTRONICS CO LTD55 citations96
US7016237B2Mar 21, 2006
Data input circuit and method for synchronous semiconductor memory device
SAMSUNG ELECTRONICS CO LTD27 citations92
US6868034B2Mar 15, 2005
Circuits and methods for changing page length in a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD20 citations92
US6762972B2Jul 13, 2004
Synchronous semiconductor memory device and method of processing data thereof
SAMSUNG ELECTRONICS CO LTD20 citations92
US6483769B2Nov 19, 2002
SDRAM having posted CAS function of JEDEC standard
SAMSUNG ELECTRONICS CO LTD40 citations92
US6359828B1Mar 19, 2002
Column address decoder and decoding method for controlling column select line enable time
SAMSUNG ELECTRONICS CO LTD25 citations92
US7054202B2May 30, 2006
High burst rate write data paths for integrated circuit memory devices and methods of operating same
SAMSUNG ELECTRONICS CO LTD13 citations84
US6819616B2Nov 16, 2004
Serial to parallel data input methods and related input buffers
SAMSUNG ELECTRONICS CO LTD18 citations83
US6151272ANov 21, 2000
Integrated circuit memory devices that utilize data masking techniques to facilitate test mode analysis
SAMSUNG ELECTRONICS CO LTD15 citations82
US7068550B2Jun 27, 2006
4-bit prefetch-type FCRAM having improved data write control circuit in memory cell array and method of masking data using the 4-bit prefetch-type FCRAM
SAMSUNG ELECTRONICS CO LTD6 citations62
US7017010B2Mar 21, 2006
Integrated circuit memory device supporting an N bit prefetch scheme and a 2N burst length
SAMSUNG ELECTRONICS CO LTD3 citations62
US6272068B1Aug 7, 2001
Integrated circuit memory devices that utilize data masking techniques to facilitate test mode analysis
SAMSUNG ELECTRONICS CO LTD3 citations62
US6842373B2Jan 11, 2005
Command decoder and decoding method for use in semiconductor memory device
SAMSUNG ELECTRONICS CO LTD5 citations54