Inventor
KUNORI YUICHI
JP21 patents
⚠️ This page may combine multiple inventors who share the name “KUNORI YUICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS TECH CORP
10 patentsUS7433230B2Oct 7, 2008
Nonvolatile semiconductor memory device having assist gate
RENESAS TECH CORP5 citations73
US7296111B2Nov 13, 2007
Multilevel storage nonvolatile semiconductor memory device enabling high-speed data reading and high-speed data writing
RENESAS TECH CORP4 citations73
US7248500B2Jul 24, 2007
Nonvolatile semiconductor memory device having reduced dependency of a source resistance on a position in an array
RENESAS TECH CORP8 citations73
US7117295B2Oct 3, 2006
Multilevel storage nonvolatile semiconductor memory device enabling high-speed data reading and high-speed data writing
RENESAS TECH CORP8 citations73
US7078805B2Jul 18, 2006
Semiconductor wafer, semiconductor chip and dicing method of a semiconductor wafer
RENESAS TECH CORP5 citations72
US7441072B2Oct 21, 2008
Multilevel storage nonvolatile semiconductor memory device enabling high-speed data reading and high-speed data writing
RENESAS TECH CORP3 citations62
US7685357B2Mar 23, 2010
Multilevel storage nonvolatile semiconductor memory device enabling high-speed data reading and high-speed data writing
RENESAS TECH CORP0 citations52
US7692966B2Apr 6, 2010
Nonvolatile semiconductor memory device having assist gate
RENESAS TECH CORP1 citations51
US7638411B2Dec 29, 2009
Semiconductor wafer, semiconductor chip and dicing method of a semiconductor wafer
RENESAS TECH CORP0 citations51
US7416964B2Aug 26, 2008
Semiconductor wafer, semiconductor chip and dicing method of a semiconductor wafer
RENESAS TECH CORP0 citations51
MITSUBISHI ELECTRIC CORP
8 patentsUS5745417AApr 28, 1998
Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor
MITSUBISHI ELECTRIC CORP135 citations99
US6144584ANov 7, 2000
Non-volatile semiconductor memory device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP90 citations98
US5898606AApr 27, 1999
Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor
MITSUBISHI ELECTRIC CORP63 citations96
US5659505AAug 19, 1997
Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor
MITSUBISHI ELECTRIC CORP67 citations95
US6380636B1Apr 30, 2002
Nonvolatile semiconductor memory device having an array structure suitable to high-density integrationization
MITSUBISHI ELECTRIC CORP77 citations94
US5538912AJul 23, 1996
Method of making memory cells with peripheral transistors
MITSUBISHI ELECTRIC CORP38 citations92
US5400278AMar 21, 1995
Semiconductor memory device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP24 citations92
US5338957AAug 16, 1994
Nonvolatile semiconductor device and a method of manufacturing thereof
MITSUBISHI ELECTRIC CORP12 citations74