Inventor

NOWAK JANUSZ J

US34 patents

⚠️ This page may combine multiple inventors who share the name “NOWAK JANUSZ J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NOWAK JANUSZ J

IBM

Structure and method to reduce shorting and process degradation in STT-MRAM devices

Structure and method to reduce shorting and process degradation in STT-MRAM devices

Spin torque transfer MRAM device formed on silicon stud grown by selective epitaxy

Spin transfer torque cell for magnetic random access memory

Memory array with self-aligned epitaxially grown memory elements and annular FET

Combined CMP and RIE contact scheme for MRAM applications

Spin transfer torque cell for magnetic random access memory

Structure and method to reduce shorting and process degradation in stt-MRAM devices

Combined CMP and RIE contact scheme for MRAM applications

Structure and method to reduce shorting and process degradation in STT-MRAM devices

Spin torque transfer MRAM device formed on silicon stud grown by selective epitaxy

Structure and fabrication of memory array with epitaxially grown memory elements and line-space patterns

Pretreatment of iron-based substrates for electroless plating

Spin transfer torque cell for magnetic random access memory

Memory array with self-aligned epitaxially grown memory elements and annular FET

Annealed seed layer for magnetic random access memory

Spin transfer torque cell for magnetic random access memory

Combined CMP and RIE contact scheme for MRAM applications

Structure and fabrication of memory array with epitaxially grown memory elements and line-space patterns

Spin transfer torque cell for magnetic random access memory

SEAGATE TECHNOLOGY LLC

High frequency assisted writing

Method of making a current-perpendicular to the plane (CPP) magnetoresistive (MR) sensor

High sensitivity tunneling GMR sensors with synthetic antiferromagnet free layer

Digital magnetoresistive sensor with bias

Spin transistor with ultra-low energy base-collector barrier

V-shape magnetic field sensor with anisotropy induced orthogonal magnetic alignment

Oxidation of material for tunnel magneto-resistive sensors

Current perpendicular to plane magnetoresistive sensor pre-product with current confining path precursor

GAIDIS MICHAEL C

Spin transfer torque cell for magnetic random access memory

Spin-torque based memory device with read and write current paths modulated with a non-linear shunt resistor

Spin-torque based memory device with read and write current paths modulated with a non-linear shunt resistor

ABRAHAM DAVID W

Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers

Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers

HU GUOHAN

Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory