Inventor
HWANG EUI-CHUL
US15 patents
⚠️ This page may combine multiple inventors who share the name “HWANG EUI-CHUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
10 patentsUS10910376B2Feb 2, 2021
Semiconductor devices including diffusion break regions
SAMSUNG ELECTRONICS CO LTD4 citations71
US10804265B2Oct 13, 2020
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US12183734B2Dec 31, 2024
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11538807B2Dec 27, 2022
Method for fabricating a semiconductor device including a gate structure with an inclined side wall
SAMSUNG ELECTRONICS CO LTD0 citations60
US11011519B2May 18, 2021
Semiconductor device including gate structure having device isolation film
SAMSUNG ELECTRONICS CO LTD0 citations60
US9929239B2Mar 27, 2018
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US9666706B2May 30, 2017
Method of manufacturing a semiconductor device including a gate electrode on a protruding group III-V material layer
SAMSUNG ELECTRONICS CO LTD0 citations51
US9099304B2Aug 4, 2015
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US11063150B2Jul 13, 2021
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations50
US10636793B2Apr 28, 2020
FINFETs having electrically insulating diffusion break regions therein and methods of forming same
SAMSUNG ELECTRONICS CO LTD0 citations39
CHO YOUNG-JIN
4 patentsUS9070706B2Jun 30, 2015
Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor device
CHO YOUNG-JIN10 citations83
US9419094B2Aug 16, 2016
Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor device
CHO YOUNG-JIN0 citations51
US9343564B2May 17, 2016
Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor device
CHO YOUNG-JIN0 citations51
US9324852B2Apr 26, 2016
Semiconductor device including a gate electrode on a protruding group III-V material layer
CHO YOUNG-JIN0 citations51