P

Inventor

YU CHIH-HAO

TW39 patents
⚠️ This page may combine multiple inventors who share the name “YU CHIH-HAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

20 patents
US9659930B1May 23, 2017

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD27 citations94
US9954076B2Apr 24, 2018

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD12 citations93
US11444178B2Sep 13, 2022

Inner spacer liner

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations85
US11289584B2Mar 29, 2022

Inner spacer features for multi-gate transistors

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations85
US10516033B2Dec 24, 2019

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US12021133B2Jun 25, 2024

Inner spacer liner

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11489078B2Nov 1, 2022

Lightly-doped channel extensions

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10879374B2Dec 29, 2020

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US12191379B2Jan 7, 2025

Multi-gate semiconductor device with inner spacer and fabrication method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9406782B2Aug 2, 2016

Structure and method for FinFET device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12554064B2Feb 17, 2026

Photonic assembly for enhanced bonding yield and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12543361B2Feb 3, 2026

Gate-all-around transistor having inner space lined by a semiconductor liner and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12087842B2Sep 10, 2024

Inner spacer features for multi-gate transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12015090B2Jun 18, 2024

Lightly-doped channel extensions

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11682714B2Jun 20, 2023

Inner spacer features for multi-gate transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12444608B2Oct 14, 2025

Structure having gate spacers with projecting portions extending into a gate dielectric

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11398384B2Jul 26, 2022

Methods for manufacturing a transistor gate by non-directional implantation of impurities in a gate spacer

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12198988B2Jan 14, 2025

Gate formation of semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11574846B2Feb 7, 2023

Gate formation of semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations60
US10269792B2Apr 23, 2019

Structure and method for FINFET device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

UNITED MICROELECTRONICS CORP

6 patents

TAIWAN SEMICONDUCTOR MFG

4 patents

YU CHIH-HAO

4 patents

CHEN HUNG-MING

1 patent

ATOM INTERNAT CO LTD

1 patent

LIN CHIN-FU

1 patent

SHIEH MING-FENG

1 patent

INTRINSIQ MAT LTD

1 patent