Inventor
WANG SHENG-CHEN
TW133 patents
Patents
50 patentsUS11423966B2Aug 23, 2022
Memory array staircase structure
TAIWAN SEMICONDUCTOR MFG CO LTD23 citations95
US10062784B1Aug 28, 2018
Self-aligned gate hard mask and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD31 citations94
US9997631B2Jun 12, 2018
Methods for reducing contact resistance in semiconductors manufacturing process
TAIWAN SEMICONDUCTOR MFG CO LTD31 citations94
US9659930B1May 23, 2017
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD27 citations94
US9954076B2Apr 24, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations93
US9472620B1Oct 18, 2016
Semiconductor device including fin structures and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD17 citations92
US9425317B1Aug 23, 2016
Fin field effect transistor (FinFET) device structure with Ge-doped inter-layer dielectric (ILD) structure
TAIWAN SEMICONDUCTOR MFG CO LTD19 citations92
US11776602B2Oct 3, 2023
Memory array staircase structure
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11587823B2Feb 21, 2023
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations86
US11581337B2Feb 14, 2023
Three-dimensional memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86
US11404099B1Aug 2, 2022
Using split word lines and switches for reducing capacitive loading on a memory system
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations86
US11355516B2Jun 7, 2022
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations86
US11527553B2Dec 13, 2022
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11495618B2Nov 8, 2022
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10985167B2Apr 20, 2021
Flexible merge scheme for source/drain epitaxy regions
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10529725B2Jan 7, 2020
Flexible merge scheme for source/drain epitaxy regions
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10529803B2Jan 7, 2020
Semiconductor device with epitaxial source/drain
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10516033B2Dec 24, 2019
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10483266B2Nov 19, 2019
Flexible merge scheme for source/drain epitaxy regions
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10276691B2Apr 30, 2019
Conformal transfer doping method for fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US10062688B2Aug 28, 2018
Semiconductor device with epitaxial source/drain
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10037923B1Jul 31, 2018
Forming transistor by selectively growing gate spacer
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9953836B2Apr 24, 2018
Barrier layer above anti-punch through (APT) implant region to improve mobility of channel region of fin field effect transistor (FinFET) device structure
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9871038B2Jan 16, 2018
Semiconductor device including fin structures and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9450046B2Sep 20, 2016
Semiconductor structure with fin structure and wire structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations84
US10272661B2Apr 30, 2019
Pad removal device and method
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US9481069B2Nov 1, 2016
Chemical mechanical polishing apparatus and polishing method using the same
TAIWAN SEMICONDUCTOR MFG CO LTD17 citations81
US11997855B2May 28, 2024
Back-end-of-line selector for memory device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations75
US11647634B2May 9, 2023
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US12069868B2Aug 20, 2024
Gated ferroelectric memory cells for memory cell array and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12002499B2Jun 4, 2024
Using split word lines and switches for reducing capacitive loading on a memory system
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11910616B2Feb 20, 2024
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11903216B2Feb 13, 2024
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11862713B2Jan 2, 2024
Conformal transfer doping method for fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11856743B2Dec 26, 2023
Flexible merge scheme for source/drain epitaxy regions
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11805652B2Oct 31, 2023
3D RAM SL/BL contact modulation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11744080B2Aug 29, 2023
Three-dimensional memory device with word lines extending through sub-arrays, semiconductor device including the same and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11600520B2Mar 7, 2023
Air gaps in memory array structures
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11574929B2Feb 7, 2023
3D ferroelectric memory
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11569264B2Jan 31, 2023
3D RAM SL/BL contact modulation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11552103B2Jan 10, 2023
Three-dimensional stackable ferroelectric random access memory devices and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11532640B2Dec 20, 2022
Method for manufacturing a three-dimensional memory
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11444069B2Sep 13, 2022
3D semiconductor package including memory array
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10879374B2Dec 29, 2020
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10680084B2Jun 9, 2020
Epitaxial structures for fin-like field effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10522540B2Dec 31, 2019
FinFET transistor with fin back biasing
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10431584B2Oct 1, 2019
Semiconductor device including fin structures and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10163902B2Dec 25, 2018
FinFET transistor with fin back biasing
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10163728B2Dec 25, 2018
Semiconductor device having a stacked fin structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9917086B2Mar 13, 2018
FinFET transistor with fin back biasing
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
Showing the top 50 of 133 patents by PatentIndex Score.