Inventor
YEONG SAI-HOOI
TW438 patents
⚠️ This page may combine multiple inventors who share the name “YEONG SAI-HOOI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
48 patentsUS11404091B2Aug 2, 2022
Memory array word line routing
TAIWAN SEMICONDUCTOR MFG CO LTD17 citations94
US10062784B1Aug 28, 2018
Self-aligned gate hard mask and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD31 citations94
US9997631B2Jun 12, 2018
Methods for reducing contact resistance in semiconductors manufacturing process
TAIWAN SEMICONDUCTOR MFG CO LTD31 citations94
US9659930B1May 23, 2017
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD27 citations94
US9954076B2Apr 24, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations93
US9601497B1Mar 21, 2017
Static random access memory and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD28 citations93
US9275905B1Mar 1, 2016
Method of forming semiconductor structure with anti-punch through structure
TAIWAN SEMICONDUCTOR MFG CO LTD26 citations93
US9472620B1Oct 18, 2016
Semiconductor device including fin structures and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD17 citations92
US9425317B1Aug 23, 2016
Fin field effect transistor (FinFET) device structure with Ge-doped inter-layer dielectric (ILD) structure
TAIWAN SEMICONDUCTOR MFG CO LTD19 citations92
US11581337B2Feb 14, 2023
Three-dimensional memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86
US11569250B2Jan 31, 2023
Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11515332B2Nov 29, 2022
Ferroelectric memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations86
US11238904B1Feb 1, 2022
Using embedded switches for reducing capacitive loading on a memory system
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11227956B2Jan 18, 2022
Nanosheet field-effect transistor device and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations86
US11217494B1Jan 4, 2022
Semiconductor devices and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations86
US11417739B2Aug 16, 2022
Contacts for semiconductor devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11289603B2Mar 29, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11189706B2Nov 30, 2021
FinFET structure with airgap and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10985167B2Apr 20, 2021
Flexible merge scheme for source/drain epitaxy regions
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10971408B2Apr 6, 2021
Contact air gap formation and structures thereof
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10923565B2Feb 16, 2021
Self-aligned contact air gap formation
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10529725B2Jan 7, 2020
Flexible merge scheme for source/drain epitaxy regions
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10529803B2Jan 7, 2020
Semiconductor device with epitaxial source/drain
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10516033B2Dec 24, 2019
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10510762B2Dec 17, 2019
Source and drain formation technique for fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10483266B2Nov 19, 2019
Flexible merge scheme for source/drain epitaxy regions
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10325911B2Jun 18, 2019
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10283624B1May 7, 2019
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10276691B2Apr 30, 2019
Conformal transfer doping method for fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US10141231B1Nov 27, 2018
FinFET device with wrapped-around epitaxial structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations84
US10062688B2Aug 28, 2018
Semiconductor device with epitaxial source/drain
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10037923B1Jul 31, 2018
Forming transistor by selectively growing gate spacer
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9953836B2Apr 24, 2018
Barrier layer above anti-punch through (APT) implant region to improve mobility of channel region of fin field effect transistor (FinFET) device structure
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9871038B2Jan 16, 2018
Semiconductor device including fin structures and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9450046B2Sep 20, 2016
Semiconductor structure with fin structure and wire structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations84
US9893191B2Feb 13, 2018
FinFET transistor with u-shaped channel
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US12317506B2May 27, 2025
Ferroelectric device and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations75
US11997855B2May 28, 2024
Back-end-of-line selector for memory device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations75
US11943933B2Mar 26, 2024
Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations75
US11862219B2Jan 2, 2024
Memory cell and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations75
US11839080B2Dec 5, 2023
3D memory with graphite conductive strips
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US11729986B2Aug 15, 2023
Ferroelectric memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations75
US11729997B2Aug 15, 2023
3D stackable memory and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US11637126B2Apr 25, 2023
Memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations75
US11563079B2Jan 24, 2023
Metal insulator metal (MIM) structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US11335552B2May 17, 2022
Structure and formation method of semiconductor device with oxide semiconductor channel
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations75
US12069868B2Aug 20, 2024
Gated ferroelectric memory cells for memory cell array and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12058869B2Aug 6, 2024
Semiconductor structure with a logic device and a memory device being formed in different levels, and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
UNIV SINGAPORE
1 patentTAN DEXTER
1 patentShowing the top 50 of 438 patents by PatentIndex Score.