Inventor
BOIVIN PHILIPPE
FR52 patents
⚠️ This page may combine multiple inventors who share the name “BOIVIN PHILIPPE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS ROUSSET
24 patentsUS7315071B2Jan 1, 2008
Magnetic RAM
ST MICROELECTRONICS ROUSSET7 citations74
US10319906B2Jun 11, 2019
Process for fabricating resistive memory cells
ST MICROELECTRONICS ROUSSET2 citations73
US10128314B2Nov 13, 2018
Vertical bipolar transistor
ST MICROELECTRONICS ROUSSET3 citations73
US10482957B2Nov 19, 2019
Resistive RAM memory cell
ST MICROELECTRONICS ROUSSET2 citations72
US10431630B2Oct 1, 2019
Method for producing transistors, in particular selection transistors for non-volatile memory, and corresponding device
ST MICROELECTRONICS ROUSSET3 citations70
US9196654B2Nov 24, 2015
Method of fabricating a vertical MOS transistor
ST MICROELECTRONICS ROUSSET3 citations63
US8048685B2Nov 1, 2011
Magnetic RAM
ST MICROELECTRONICS ROUSSET4 citations63
US12262649B2Mar 25, 2025
Phase-change memory
ST MICROELECTRONICS ROUSSET0 citations62
US12213392B2Jan 28, 2025
Insulation of phase-change memory cells
ST MICROELECTRONICS ROUSSET0 citations62
US12096640B2Sep 17, 2024
Resistive memory cell having an ovonic threshold switch
ST MICROELECTRONICS ROUSSET0 citations62
US11882707B2Jan 23, 2024
Integrated circuit including transistors having a common base
ST MICROELECTRONICS ROUSSET0 citations62
US11637144B2Apr 25, 2023
Method of forming resistive memory cell having an ovonic threshold switch
ST MICROELECTRONICS ROUSSET0 citations62
US11211428B2Dec 28, 2021
Integrated circuit including transistors having a common base
ST MICROELECTRONICS ROUSSET0 citations62
US11114614B2Sep 7, 2021
Process for fabricating resistive memory cells
ST MICROELECTRONICS ROUSSET0 citations62
US11114502B2Sep 7, 2021
Resistive memory cell having an ovonic threshold switch
ST MICROELECTRONICS ROUSSET0 citations62
US8830761B2Sep 9, 2014
Method of reading and writing nonvolatile memory cells
ST MICROELECTRONICS ROUSSET2 citations61
US10998378B2May 4, 2021
Method for producing transistors, in particular selection transistors for non-volatile memory, and corresponding device
ST MICROELECTRONICS ROUSSET0 citations60
US10714501B2Jul 14, 2020
Co-integration of bulk and SOI transistors
ST MICROELECTRONICS ROUSSET1 citations59
US11818901B2Nov 14, 2023
Integrated circuit including bipolar transistors
ST MICROELECTRONICS ROUSSET0 citations58
US11152430B2Oct 19, 2021
Integrated circuit including bipolar transistors
ST MICROELECTRONICS ROUSSET0 citations58
US9941390B2Apr 10, 2018
Method of fabricating a vertical MOS transistor
ST MICROELECTRONICS ROUSSET0 citations52
US8999796B2Apr 7, 2015
Manufacturing process of memory cells
ST MICROELECTRONICS ROUSSET0 citations52
US8921219B2Dec 30, 2014
Process for fabricating a transistor comprising nanocrystals
ST MICROELECTRONICS ROUSSET0 citations52
US7692228B2Apr 6, 2010
Magnetic RAM
ST MICROELECTRONICS ROUSSET0 citations52
ST MICROELECTRONICS CROLLES 2 SAS
15 patentsUS11957067B2Apr 9, 2024
Phase-change memory cell having a compact structure
ST MICROELECTRONICS CROLLES 2 SAS2 citations72
US11653582B2May 16, 2023
Chip containing an onboard non-volatile memory comprising a phase-change material
ST MICROELECTRONICS CROLLES 2 SAS4 citations72
US9793321B2Oct 17, 2017
Resistive memory cell having a compact structure
ST MICROELECTRONICS CROLLES 2 SAS2 citations72
US9735353B2Aug 15, 2017
Phase-change memory cell having a compact structure
ST MICROELECTRONICS CROLLES 2 SAS2 citations72
US11411177B2Aug 9, 2022
Phase-change memory with insulated walls
ST MICROELECTRONICS CROLLES 2 SAS2 citations71
US9929146B2Mar 27, 2018
Method of forming MOS and bipolar transistors
ST MICROELECTRONICS CROLLES 2 SAS4 citations71
US12484460B2Nov 25, 2025
Phase-change memory cell having a compact structure
ST MICROELECTRONICS CROLLES 2 SAS0 citations62
US11031550B2Jun 8, 2021
Phase-change memory cell having a compact structure
ST MICROELECTRONICS CROLLES 2 SAS0 citations62
US11800821B2Oct 24, 2023
Phase-change memory with an insulating layer on a cavity sidewall
ST MICROELECTRONICS CROLLES 2 SAS0 citations61
US12232435B2Feb 18, 2025
Chip containing an onboard non-volatile memory comprising a phase-change material
ST MICROELECTRONICS CROLLES 2 SAS0 citations59
US11329067B2May 10, 2022
Co-integration of bulk and SOI transistors
ST MICROELECTRONICS CROLLES 2 SAS0 citations59
US12342734B2Jun 24, 2025
Phase-change memory
ST MICROELECTRONICS CROLLES 2 SAS0 citations55
US12004432B2Jun 4, 2024
Phase-change memory
ST MICROELECTRONICS CROLLES 2 SAS0 citations55
US10707270B2Jul 7, 2020
Resistive memory cell having a compact structure
ST MICROELECTRONICS CROLLES 2 SAS0 citations51
US10283563B2May 7, 2019
Resistive memory cell having a compact structure
ST MICROELECTRONICS CROLLES 2 SAS0 citations51
STMICROELECTRONICS ROUSSET
3 patentsBOIVIN PHILIPPE
2 patentsUNIV AIX MARSEILLE
2 patentsUS11875847B2Jan 16, 2024
Self-referenced and regulated sensing solution for phase change memory with ovonic threshold switch
UNIV AIX MARSEILLE2 citations65
US12176030B2Dec 24, 2024
Self-referenced and regulated sensing solution for phase change memory with ovonic threshold switch
UNIV AIX MARSEILLE0 citations54
CASTELLAN JULIA
1 patentINSTITUT NAT DOPTIQUE
1 patentST MICROELECTRONICS SA
1 patentSGS THOMSON MICROELECTRONICS
1 patentShowing the top 50 of 52 patents by PatentIndex Score.