P

Inventor

BOIVIN PHILIPPE

FR52 patents
⚠️ This page may combine multiple inventors who share the name “BOIVIN PHILIPPE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ST MICROELECTRONICS ROUSSET

24 patents
US7315071B2Jan 1, 2008

Magnetic RAM

ST MICROELECTRONICS ROUSSET7 citations74
US10319906B2Jun 11, 2019

Process for fabricating resistive memory cells

ST MICROELECTRONICS ROUSSET2 citations73
US10128314B2Nov 13, 2018

Vertical bipolar transistor

ST MICROELECTRONICS ROUSSET3 citations73
US10482957B2Nov 19, 2019

Resistive RAM memory cell

ST MICROELECTRONICS ROUSSET2 citations72
US10431630B2Oct 1, 2019

Method for producing transistors, in particular selection transistors for non-volatile memory, and corresponding device

ST MICROELECTRONICS ROUSSET3 citations70
US9196654B2Nov 24, 2015

Method of fabricating a vertical MOS transistor

ST MICROELECTRONICS ROUSSET3 citations63
US8048685B2Nov 1, 2011

Magnetic RAM

ST MICROELECTRONICS ROUSSET4 citations63
US12262649B2Mar 25, 2025

Phase-change memory

ST MICROELECTRONICS ROUSSET0 citations62
US12213392B2Jan 28, 2025

Insulation of phase-change memory cells

ST MICROELECTRONICS ROUSSET0 citations62
US12096640B2Sep 17, 2024

Resistive memory cell having an ovonic threshold switch

ST MICROELECTRONICS ROUSSET0 citations62
US11882707B2Jan 23, 2024

Integrated circuit including transistors having a common base

ST MICROELECTRONICS ROUSSET0 citations62
US11637144B2Apr 25, 2023

Method of forming resistive memory cell having an ovonic threshold switch

ST MICROELECTRONICS ROUSSET0 citations62
US11211428B2Dec 28, 2021

Integrated circuit including transistors having a common base

ST MICROELECTRONICS ROUSSET0 citations62
US11114614B2Sep 7, 2021

Process for fabricating resistive memory cells

ST MICROELECTRONICS ROUSSET0 citations62
US11114502B2Sep 7, 2021

Resistive memory cell having an ovonic threshold switch

ST MICROELECTRONICS ROUSSET0 citations62
US8830761B2Sep 9, 2014

Method of reading and writing nonvolatile memory cells

ST MICROELECTRONICS ROUSSET2 citations61
US10998378B2May 4, 2021

Method for producing transistors, in particular selection transistors for non-volatile memory, and corresponding device

ST MICROELECTRONICS ROUSSET0 citations60
US10714501B2Jul 14, 2020

Co-integration of bulk and SOI transistors

ST MICROELECTRONICS ROUSSET1 citations59
US11818901B2Nov 14, 2023

Integrated circuit including bipolar transistors

ST MICROELECTRONICS ROUSSET0 citations58
US11152430B2Oct 19, 2021

Integrated circuit including bipolar transistors

ST MICROELECTRONICS ROUSSET0 citations58
US9941390B2Apr 10, 2018

Method of fabricating a vertical MOS transistor

ST MICROELECTRONICS ROUSSET0 citations52
US8999796B2Apr 7, 2015

Manufacturing process of memory cells

ST MICROELECTRONICS ROUSSET0 citations52
US8921219B2Dec 30, 2014

Process for fabricating a transistor comprising nanocrystals

ST MICROELECTRONICS ROUSSET0 citations52
US7692228B2Apr 6, 2010

Magnetic RAM

ST MICROELECTRONICS ROUSSET0 citations52

ST MICROELECTRONICS CROLLES 2 SAS

15 patents
US11957067B2Apr 9, 2024

Phase-change memory cell having a compact structure

ST MICROELECTRONICS CROLLES 2 SAS2 citations72
US11653582B2May 16, 2023

Chip containing an onboard non-volatile memory comprising a phase-change material

ST MICROELECTRONICS CROLLES 2 SAS4 citations72
US9793321B2Oct 17, 2017

Resistive memory cell having a compact structure

ST MICROELECTRONICS CROLLES 2 SAS2 citations72
US9735353B2Aug 15, 2017

Phase-change memory cell having a compact structure

ST MICROELECTRONICS CROLLES 2 SAS2 citations72
US11411177B2Aug 9, 2022

Phase-change memory with insulated walls

ST MICROELECTRONICS CROLLES 2 SAS2 citations71
US9929146B2Mar 27, 2018

Method of forming MOS and bipolar transistors

ST MICROELECTRONICS CROLLES 2 SAS4 citations71
US12484460B2Nov 25, 2025

Phase-change memory cell having a compact structure

ST MICROELECTRONICS CROLLES 2 SAS0 citations62
US11031550B2Jun 8, 2021

Phase-change memory cell having a compact structure

ST MICROELECTRONICS CROLLES 2 SAS0 citations62
US11800821B2Oct 24, 2023

Phase-change memory with an insulating layer on a cavity sidewall

ST MICROELECTRONICS CROLLES 2 SAS0 citations61
US12232435B2Feb 18, 2025

Chip containing an onboard non-volatile memory comprising a phase-change material

ST MICROELECTRONICS CROLLES 2 SAS0 citations59
US11329067B2May 10, 2022

Co-integration of bulk and SOI transistors

ST MICROELECTRONICS CROLLES 2 SAS0 citations59
US12342734B2Jun 24, 2025

Phase-change memory

ST MICROELECTRONICS CROLLES 2 SAS0 citations55
US12004432B2Jun 4, 2024

Phase-change memory

ST MICROELECTRONICS CROLLES 2 SAS0 citations55
US10707270B2Jul 7, 2020

Resistive memory cell having a compact structure

ST MICROELECTRONICS CROLLES 2 SAS0 citations51
US10283563B2May 7, 2019

Resistive memory cell having a compact structure

ST MICROELECTRONICS CROLLES 2 SAS0 citations51

STMICROELECTRONICS ROUSSET

3 patents

BOIVIN PHILIPPE

2 patents

UNIV AIX MARSEILLE

2 patents

CASTELLAN JULIA

1 patent

INSTITUT NAT DOPTIQUE

1 patent

ST MICROELECTRONICS SA

1 patent

SGS THOMSON MICROELECTRONICS

1 patent

Showing the top 50 of 52 patents by PatentIndex Score.