Inventor

LABONTE ANDRE

US22 patents

⚠️ This page may combine multiple inventors who share the name “LABONTE ANDRE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LABONTE ANDRE

GLOBALFOUNDRIES INC

Air-gap gate sidewall spacer and method

Gate contact structure positioned above an active region of a transistor device

Middle of the line (MOL) contacts with two-dimensional self-alignment

Method and apparatus for placing a gate contact inside a semiconductor active region having high-k dielectric gate caps

Three-dimensional semiconductor transistor with gate contact in active region

Gate contact structure having gate contact layer

Methods of forming contacts on semiconductor devices and the resulting devices

Gate cut method after source/drain metallization

Method and apparatus for placing a gate contact inside an active region of a semiconductor

Methods of forming a gate contact above an active region of a semiconductor device

Methods of forming self-aligned contact structures on semiconductor devices and the resulting devices

Gate and source/drain contact structures for a semiconductor device

Methods of forming a combined gate and source/drain contact structure and the resulting device

Air-gap gate sidewall spacer and method

Method and apparatus for placing a gate contact inside a semiconductor active region having high-k dielectric gate caps

Methods of forming an air gap adjacent a gate of a transistor and a gate contact above the active region of the transistor

Insulating gate separation structure for transistor devices

Self-aligned buried contact for vertical field-effect transistor and method of production thereof

Contacting source and drain of a transistor device

Middle of the line (MOL) contacts with two-dimensional self-alignment

Self-aligned contacts and methods of fabrication

NAT SEMICONDUCTOR CORP

SiGe heterojunction bipolar transistor and method of forming a SiGe heterojunction bipolar transistor