Inventor

RAMESH RAMAMOORTHY

US92 patents

⚠️ This page may combine multiple inventors who share the name “RAMESH RAMAMOORTHY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RAMESH RAMAMOORTHY

KEPLER COMPUTING INC

Artificial intelligence processor with three-dimensional stacked memory

High-density low voltage non-volatile differential memory bit-cell with shared plate-line

Low power ferroelectric based majority logic gate adder

High-density low voltage non-volatile differential memory bit-cell with shared plate line

Low power ferroelectric based majority logic gate carry propagate and serial adder

Majority logic gate with non-linear input capacitors

Artificial intelligence processor with three-dimensional stacked memory

Majority logic gate based sequential circuit

Majority logic gate fabrication

Ferroelectric device film stacks with texturing layer, and method of forming such

3D stacked compute and memory with copper pillars

Majority logic gate having paraelectric input capacitors and a local conditioning mechanism

Low power ferroelectric based majority logic gate multiplier

Majority logic gate with non-linear input capacitors and conditioning logic

Integration method of ferroelectric memory array

Linear input and non-linear output threshold logic gate

Majority logic gate having ferroelectric input capacitors and a pulsing scheme coupled to a conditioning logic

3D stacked ferroelectric compute and memory

High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor

BELL COMMUNICATIONS RES

Barrier layer for ferroelectric capacitor integrated on silicon

Cubic metal oxide thin film epitaxially grown on silicon

C-axis perovskite thin films grown on silicon dioxide

Polycrystalline ferroelectric capacitor heterostructure employing hybrid electrodes

Ferroelectric capacitor heterostructure and method of making same

Electrode structure for ferroelectric capacitor integrated on silicon

Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films

Platinum-free ferroelectric memory cell with intermetallic barrier layer and method of making same

Ferroelectrics epitaxially grown on superconducting substrates

Growth of a,b-axis oriented pervoskite thin films

Growth of a,b-axis oriented perovskite thin films over a buffer/template layer

Method for the preparation of epitaxial ferromagnetic manganese aluminum magnetic memory element

UNIV MARYLAND

Conductively doped strontium titanate barrier intermediate a silicon underlayer and an epitaxial metal oxide film

Epitaxial template and barrier for the integration of functional thin film metal oxide heterostructures on silicon

Amorphous barrier layer in a ferroelectric memory cell

Niobium or vanadium substituted strontium titanate barrier intermediate a silicon underlayer and a functional metal oxide film

Bismuth ferrite films and devices grown on silicon

TELCORDIA TECH INC

Amorphous barrier layer in a ferroelectric memory cell

Methods and structures to cure the effects of hydrogen annealing on ferroelectric capacitors

Annealing of a crystalline perovskite ferroelectric cell

Methods to cure the effects of hydrogen annealing on ferroelectric capacitors

LUCENT TECHNOLOGIES INC

Article comprising magnetoresistive material

TACHYON SEMICONDUCTOR CORP

Ferroelectric circuit element that can be fabricated at low temperatures and method for making the same

CANDESCENT TECH CORP

Tailored spacer wall coatings for reduced secondary electron emission

MOTOROLA INC

Microelectronic piezoelectric structure and method of forming the same

IBM

Double layer perovskite oxide electrodes

TACHYON SEMICONDUCTORS CORP

Ferroelectric circuit element that can be fabricated at low temperatures and method for making the same

MAJUMDAR ARUNAVA

Complex oxides useful for thermoelectric energy conversion

ADVANCED MATERIALS AND DESIGN

Method of forming high-strength, tough, corrosion-resistant steel

ZECHES ROBERT J

Thin film bismuth iron oxides useful for piezoelectric devices

US ENERGY

High energy product permanent magnet having improved intrinsic coercivity and method of making same