Inventor
YANG JIING-FENG
TW18 patents
⚠️ This page may combine multiple inventors who share the name “YANG JIING-FENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
9 patentsUS10361152B2Jul 23, 2019
Semiconductor structure having an air-gap region and a method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations83
US11551968B2Jan 10, 2023
Inter-wire cavity for low capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US12550721B2Feb 10, 2026
Inter-wire cavity for low capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12543566B2Feb 3, 2026
Semiconductor devices and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12165947B2Dec 10, 2024
Semiconductor devices and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12230603B2Feb 18, 2025
Method of fabricating a semiconductor chip having strength adjustment pattern in bonding layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12142574B2Nov 12, 2024
Semiconductor devices and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11756924B2Sep 12, 2023
Method of fabricating a semiconductor chip having strength adjustment pattern in bonding layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12002710B2Jun 4, 2024
Semiconductor structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
TAIWAN SEMICONDUCTOR MFG
3 patentsUS8999839B2Apr 7, 2015
Semiconductor structure having an air-gap region and a method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG187 citations98
US9099530B2Aug 4, 2015
Methods of patterning small via pitch dimensions
TAIWAN SEMICONDUCTOR MFG108 citations96
US6495469B1Dec 17, 2002
High selectivity, low etch depth micro-loading process for non stop layer damascene etch
TAIWAN SEMICONDUCTOR MFG20 citations92