Inventor
KO YOUNG MIN
KR21 patents
⚠️ This page may combine multiple inventors who share the name “KO YOUNG MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
16 patentsUS10490623B2Nov 26, 2019
Semiconductor device including a plurality of electrodes and supporters
SAMSUNG ELECTRONICS CO LTD6 citations82
US9263536B2Feb 16, 2016
Methods of fabricating semiconductor devices with electrode support patterns
SAMSUNG ELECTRONICS CO LTD18 citations81
US10418027B2Sep 17, 2019
Electronic device and method for controlling the same
SAMSUNG ELECTRONICS CO LTD7 citations76
US5776250AJul 7, 1998
Device for recovering photoresist material exhausted from a spin coater
SAMSUNG ELECTRONICS CO LTD14 citations72
US11094745B2Aug 17, 2021
Variable resistance memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US10879345B2Dec 29, 2020
Semiconductor device including a plurality of electrodes and supporters
SAMSUNG ELECTRONICS CO LTD3 citations71
US10170541B2Jan 1, 2019
Semiconductor device including a plurality of electrodes and supporters
SAMSUNG ELECTRONICS CO LTD3 citations71
US10586709B2Mar 10, 2020
Methods of fabricating semiconductor devices
SAMSUNG ELECTRONICS CO LTD3 citations70
US9570448B2Feb 14, 2017
Semiconductor device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations70
US11277278B2Mar 15, 2022
Smart home service server and control method therefor
SAMSUNG ELECTRONICS CO LTD2 citations68
US11626476B2Apr 11, 2023
Semiconductor device including a plurality of electrodes and supporters
SAMSUNG ELECTRONICS CO LTD0 citations61
US11456414B2Sep 27, 2022
Variable resistance memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations59
US9142610B2Sep 22, 2015
Semiconductor device including supporters on a lower electrode thereof and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations59
US11171287B2Nov 9, 2021
Variable resistance memory device including silicon capping pattern
SAMSUNG ELECTRONICS CO LTD0 citations58
US10930848B2Feb 23, 2021
Variable resistance memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations49
US10720470B2Jul 21, 2020
Variable resistance memory devices
SAMSUNG ELECTRONICS CO LTD0 citations40