Inventor
LIN YI-AN
TW31 patents
⚠️ This page may combine multiple inventors who share the name “LIN YI-AN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
22 patentsUS9443769B2Sep 13, 2016
Wrap-around contact
TAIWAN SEMICONDUCTOR MFG CO LTD534 citations99
US10651091B2May 12, 2020
Wrap-around contact on FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10269649B2Apr 23, 2019
Wrap-around contact on FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9941367B2Apr 10, 2018
Wrap-around contact on FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10755995B2Aug 25, 2020
Warpage control of semiconductor die
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations80
US10391608B2Aug 27, 2019
Backside polisher with dry frontside design and method using the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9812551B2Nov 7, 2017
Method of forming the gate electrode of field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9337103B2May 10, 2016
Method for removing hard mask oxide and making gate structure of semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11114395B2Sep 7, 2021
Post passivation interconnect
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US11018100B2May 25, 2021
Semiconductor device having a passivation layer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US10453811B2Oct 22, 2019
Post passivation interconnect and fabrication method therefor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10290596B2May 14, 2019
Semiconductor device having a passivation layer and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US11854898B2Dec 26, 2023
Wrap-around contact on FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11362000B2Jun 14, 2022
Wrap-around contact on FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11817404B2Nov 14, 2023
Post passivation interconnect
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12431447B2Sep 30, 2025
Semiconductor device having a passivation layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12002771B2Jun 4, 2024
Semiconductor device having a passivation layer and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12021002B2Jun 25, 2024
Warpage control of semiconductor die
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11450584B2Sep 20, 2022
Warpage control of semiconductor die
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US10797156B2Oct 6, 2020
Method of forming the gate electrode of field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10516031B2Dec 24, 2019
Method of forming the gate electrode of field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9865477B2Jan 9, 2018
Backside polisher with dry frontside design and method using the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52