Inventor
EHLERT ROBERT
US4 patents
Patents
4 patentsUS12224337B2Feb 11, 2025
PGaN enhancement mode HEMTs with dopant diffusion spacer
INTEL CORP0 citations57
US12432964B2Sep 30, 2025
Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor (CMOS) integrated circuit technology
INTEL CORP0 citations49
US11955482B2Apr 9, 2024
Source or drain structures with high phosphorous dopant concentration
INTEL CORP0 citations43
US12439627B2Oct 7, 2025
Gate structures to enable lower subthreshold slope in gallium nitride-based transistors
INTEL CORP0 citations39