Inventor

BAZIZI EL MEHDI

US27 patents

⚠️ This page may combine multiple inventors who share the name “BAZIZI EL MEHDI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BAZIZI EL MEHDI

GLOBALFOUNDRIES INC

Resistor structure with high resistance based on very thin semiconductor layer

Methods for fabricating integrated circuits with improved implantation processes

System and method employing three-dimensional (3D) emulation of in-kerf optical macros

MOS capacitive structure of reduced capacitance variability

Performance enhancement in transistors by providing a graded embedded strain-inducing semiconductor region with adapted angles with respect to the substrate surface

Method of forming a semiconductor device structure employing fluorine doping and according semiconductor device structure

Capacitive structure in a semiconductor device having reduced capacitance variability

Methods for fabricating integrated circuits with improved implantation processes

Field-effect transistors with a grown silicon-germanium channel

Semiconductor structure including a nonvolatile memory cell and method for the formation thereof

Thin body field effect transistor including a counter-doped channel area and a method of forming the same

Fully depleted silicon on insulator (FDSOI) lateral double-diffused metal oxide semiconductor (LDMOS) for high frequency applications

Laterally double diffused metal oxide semiconductor (LDMOS) device on fully depleted silicon on insulator (FDSOI) enabling high input voltage

Buried-channel low noise transistors and methods of making such devices

APPLIED MATERIALS INC

Gate all around device with fully-depleted silicon-on-insulator

Graded doping in power devices

Method of ultra thinning of wafer

Self-aligned wide backside power rail contacts to multiple transistor sources

Stress incorporation in semiconductor devices

Doped through-contact structures

Gate all around backside power rail formation with backside dielectric isolation scheme

Gradient doping epitaxy in superjunction to improve breakdown voltage

Methods for forming alignment marks

GLOBALFOUNDRIES US INC

Asymmetric FET for FDSOI devices

Asymmetric FET for FDSOI devices

BAZIZI EL MEHDI

Semiconductor devices and methods of forming the semiconductor devices including a retrograde well

MICROMATERIALS LLC

Fully self-aligned via