Inventor

MIN BYUNG-HYUK

KR9 patents

Patents

9 patents

US5593909AJan 14, 1997

Method for fabricating a MOS transistor having an offset resistance

SAMSUNG ELECTRONICS CO LTD106 citations97

US5894157AApr 13, 1999

MOS transistor having an offset resistance derived from a multiple region gate electrode

SAMSUNG ELECTRONICS CO LTD79 citations95

US5840602ANov 24, 1998

Methods of forming nonmonocrystalline silicon-on-insulator thin-film transistors

SAMSUNG ELECTRONICS CO LTD20 citations92

US5283760AFeb 1, 1994

Data transmission circuit

SAMSUNG ELECTRONICS CO LTD20 citations92

US5488005AJan 30, 1996

Process for manufacturing an offset gate structure thin film transistor

SAMSUNG ELECTRONICS CO LTD53 citations86

US5920085AJul 6, 1999

Multiple floating gate field effect transistors and methods of operating same

SAMSUNG ELECTRONICS CO LTD7 citations73

US5804837ASep 8, 1998

Polysilicon thin-film transistor and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD10 citations73

US5793058AAug 11, 1998

Multi-gate offset source and drain field effect transistors and methods of operating same

SAMSUNG ELECTRONICS CO LTD14 citations73

US5885859AMar 23, 1999

Methods of fabricating multi-gate, offset source and drain field effect transistors

SAMSUNG ELECTRONICS CO LTD2 citations62