Inventor
SRIDEVAN SRIKANT
US18 patents
⚠️ This page may combine multiple inventors who share the name “SRIDEVAN SRIKANT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INT RECTIFIER CORP
13 patentsUS6608350B2Aug 19, 2003
High voltage vertical conduction superjunction semiconductor device
INT RECTIFIER CORP213 citations99
US6194741B1Feb 27, 2001
MOSgated trench type power semiconductor with silicon carbide substrate and increased gate breakdown voltage and reduced on-resistance
INT RECTIFIER CORP204 citations99
US6509240B2Jan 21, 2003
Angle implant process for cellular deep trench sidewall doping
INT RECTIFIER CORP99 citations97
US6512267B2Jan 28, 2003
Superjunction device with self compensated trench walls
INT RECTIFIER CORP63 citations96
US8368120B2Feb 5, 2013
Hybrid semiconductor device having a GaN transistor and a silicon MOSFET
INT RECTIFIER CORP20 citations92
US8017978B2Sep 13, 2011
Hybrid semiconductor device
INT RECTIFIER CORP40 citations92
USRE41509EAug 17, 2010
High voltage vertical conduction superjunction semiconductor device
INT RECTIFIER CORP16 citations92
US6835993B2Dec 28, 2004
Bidirectional shallow trench superjunction device with resurf region
INT RECTIFIER CORP52 citations92
US6787872B2Sep 7, 2004
Lateral conduction superjunction semiconductor device
INT RECTIFIER CORP38 citations92
US6812525B2Nov 2, 2004
Trench fill process
INT RECTIFIER CORP27 citations86
US6552363B2Apr 22, 2003
Polysilicon FET built on silicon carbide diode substrate
INT RECTIFIER CORP15 citations84
US6900537B2May 31, 2005
High power silicon carbide and silicon semiconductor device package
INT RECTIFIER CORP10 citations74
US6727128B2Apr 27, 2004
Method of preparing polysilicon FET built on silicon carbide diode substrate
INT RECTIFIER CORP10 citations74