Inventor
LIU JOYCE C
US18 patents
⚠️ This page may combine multiple inventors who share the name “LIU JOYCE C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
13 patentsUS6348076B1Feb 19, 2002
Slurry for mechanical polishing (CMP) of metals and use thereof
IBM147 citations98
US6720249B1Apr 13, 2004
Protective hardmask for producing interconnect structures
IBM59 citations96
US6838347B1Jan 4, 2005
Method for reducing line edge roughness of oxide material using chemical oxide removal
IBM28 citations92
US6821890B2Nov 23, 2004
Method for improving adhesion to copper
IBM37 citations92
US6271595B1Aug 7, 2001
Method for improving adhesion to copper
IBM30 citations92
US6828187B1Dec 7, 2004
Method for uniform reactive ion etching of dual pre-doped polysilicon regions
IBM17 citations83
US6518151B1Feb 11, 2003
Dual layer hard mask for eDRAM gate etch process
IBM14 citations82
US6429067B1Aug 6, 2002
Dual mask process for semiconductor devices
IBM15 citations81
US6703312B2Mar 9, 2004
Method of forming active devices of different gatelengths using lithographic printed gate images of same length
IBM16 citations80
US7081393B2Jul 25, 2006
Reduced dielectric constant spacer materials integration for high speed logic gates
IBM8 citations73
US7858485B2Dec 28, 2010
Structure and method for manufacturing trench capacitance
IBM2 citations62
US8907494B2Dec 9, 2014
Electrical leakage reduction in stacked integrated circuits having through-silicon-via (TSV) structures
IBM2 citations61
US6284574B1Sep 4, 2001
Method of producing heat dissipating structure for semiconductor devices
IBM4 citations60
GLOBALFOUNDRIES INC
5 patentsUS9728506B2Aug 8, 2017
Strain engineering devices using partial depth films in through-substrate vias
GLOBALFOUNDRIES INC0 citations51
US10446484B2Oct 15, 2019
Through-silicon via with improved substrate contact for reduced through-silicon via (TSV) capacitance variability
GLOBALFOUNDRIES INC0 citations50
US9847290B1Dec 19, 2017
Through-silicon via with improved substrate contact for reduced through-silicon via (TSV) capacitance variability
GLOBALFOUNDRIES INC0 citations50
US9252133B2Feb 2, 2016
Electrical leakage reduction in stacked integrated circuits having through-silicon-via (TSV) structures
GLOBALFOUNDRIES INC1 citations50
US10095115B2Oct 9, 2018
Forming edge etch protection using dual layer of positive-negative tone resists
GLOBALFOUNDRIES INC0 citations43