Inventor
CHANG SHANG-DE TED
US14 patents
⚠️ This page may combine multiple inventors who share the name “CHANG SHANG-DE TED”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
PROGRAMMABLE MICROELECTRONICS
12 patentsUS5912842AJun 15, 1999
Nonvolatile PMOS two transistor memory cell and array
PROGRAMMABLE MICROELECTRONICS106 citations97
US5761121AJun 2, 1998
PMOS single-poly non-volatile memory structure
PROGRAMMABLE MICROELECTRONICS135 citations97
US5736764AApr 7, 1998
PMOS flash EEPROM cell with single poly
PROGRAMMABLE MICROELECTRONICS125 citations97
US5687118ANov 11, 1997
PMOS memory cell with hot electron injection programming and tunnelling erasing
PROGRAMMABLE MICROELECTRONICS132 citations97
US5966329AOct 12, 1999
Apparatus and method for programming PMOS memory cells
PROGRAMMABLE MICROELECTRONICS67 citations96
US5841165ANov 24, 1998
PMOS flash EEPROM cell with single poly
PROGRAMMABLE MICROELECTRONICS104 citations95
US5723355AMar 3, 1998
Method to incorporate non-volatile memory and logic components into a single sub-0.3 micron fabrication process for embedded non-volatile memory
PROGRAMMABLE MICROELECTRONICS98 citations95
US5801994ASep 1, 1998
Non-volatile memory array architecture
PROGRAMMABLE MICROELECTRONICS59 citations94
US5706227AJan 6, 1998
Double poly split gate PMOS flash memory cell
PROGRAMMABLE MICROELECTRONICS74 citations94
US5691939ANov 25, 1997
Triple poly PMOS flash memory cell
PROGRAMMABLE MICROELECTRONICS59 citations94
US5909392AJun 1, 1999
PMOS memory array having OR gate architecture
PROGRAMMABLE MICROELECTRONICS56 citations92
US5666307ASep 9, 1997
PMOS flash memory cell capable of multi-level threshold voltage storage
PROGRAMMABLE MICROELECTRONICS55 citations92