Inventor
WATTS JOSEF S
US27 patents
⚠️ This page may combine multiple inventors who share the name “WATTS JOSEF S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
13 patentsUS5334880AAug 2, 1994
Low voltage programmable storage element
IBM124 citations99
US5420456AMay 30, 1995
ZAG fuse for reduced blow-current application
IBM98 citations96
US5418738AMay 23, 1995
Low voltage programmable storage element
IBM53 citations96
US6314390B1Nov 6, 2001
Method of determining model parameters for a MOSFET compact model using a stochastic search algorithm
IBM47 citations87
US7353473B2Apr 1, 2008
Modeling small mosfets using ensemble devices
IBM12 citations83
US6329690B1Dec 11, 2001
Method and apparatus to match semiconductor device performance
IBM16 citations83
US7640143B2Dec 29, 2009
Circuit statistical modeling for partially correlated model parameters
IBM19 citations81
US8010930B2Aug 30, 2011
Extracting consistent compact model parameters for related devices
IBM2 citations62
US6683345B1Jan 27, 2004
Semiconductor device and method for making the device having an electrically modulated conduction channel
IBM6 citations61
US7783466B2Aug 24, 2010
IC chip parameter modeling
IBM2 citations49
US8524513B2Sep 3, 2013
Measuring floating body voltage in silicon-on-insulator (SOI) metal-oxide-semiconductor-field-effect-transistor (MOSFET)
IBM1 citations45
US9570538B2Feb 14, 2017
Methods of manufacturing polyresistors with selected TCR
IBM0 citations42
US9472609B2Oct 18, 2016
Methods of manufacturing polyresistors with selected TCR
IBM0 citations42
GLOBALFOUNDRIES INC
9 patentsUS10170473B1Jan 1, 2019
Forming long channel FinFET with short channel vertical FinFET and related integrated circuit
GLOBALFOUNDRIES INC20 citations94
US10128187B2Nov 13, 2018
Integrated circuit structure having gate contact and method of forming same
GLOBALFOUNDRIES INC5 citations84
US10079308B1Sep 18, 2018
Vertical transistor structure with looped channel
GLOBALFOUNDRIES INC8 citations84
US9405186B1Aug 2, 2016
Sample plan creation for optical proximity correction with minimal number of clips
GLOBALFOUNDRIES INC4 citations71
US10629532B2Apr 21, 2020
Integrated circuit structure having gate contact and method of forming same
GLOBALFOUNDRIES INC0 citations52
US10374029B2Aug 6, 2019
Semiconductor device resistor structure
GLOBALFOUNDRIES INC0 citations51
US9923046B1Mar 20, 2018
Semiconductor device resistor structure
GLOBALFOUNDRIES INC1 citations51
US10090209B2Oct 2, 2018
Methods of predicting unity gain frequency with direct current and/or low frequency parameters
GLOBALFOUNDRIES INC1 citations43
US9704763B2Jul 11, 2017
Methods of predicting unity gain frequency with direct current and/or low frequency parameters
GLOBALFOUNDRIES INC0 citations43