Inventor
ELLER MANFRED
US46 patents
⚠️ This page may combine multiple inventors who share the name “ELLER MANFRED”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
25 patentsUS9576952B2Feb 21, 2017
Integrated circuits with varying gate structures and fabrication methods
GLOBALFOUNDRIES INC421 citations98
US9362180B2Jun 7, 2016
Integrated circuit having multiple threshold voltages
GLOBALFOUNDRIES INC425 citations98
US9082698B1Jul 14, 2015
Methods to improve FinFet semiconductor device behavior using co-implantation under the channel region
GLOBALFOUNDRIES INC30 citations91
US10083971B1Sep 25, 2018
Vertical SRAM structure with cross-coupling contacts penetrating through common gates to bottom S/D metal contacts
GLOBALFOUNDRIES INC14 citations84
US9734897B1Aug 15, 2017
SRAM bitcell structures facilitating biasing of pass gate transistors
GLOBALFOUNDRIES INC7 citations84
US9455201B2Sep 27, 2016
Integration method for fabrication of metal gate based multiple threshold voltage devices and circuits
GLOBALFOUNDRIES INC18 citations83
US10529724B2Jan 7, 2020
Method of manufacturing a vertical SRAM with cross-coupled contacts penetrating through common gate structures
GLOBALFOUNDRIES INC2 citations73
US10147802B2Dec 4, 2018
FINFET circuit structures with vertically spaced transistors and fabrication methods
GLOBALFOUNDRIES INC2 citations73
US9824748B1Nov 21, 2017
SRAM bitcell structures facilitating biasing of pull-up transistors
GLOBALFOUNDRIES INC5 citations73
US9799661B1Oct 24, 2017
SRAM bitcell structures facilitating biasing of pull-down transistors
GLOBALFOUNDRIES INC2 citations73
US9570586B2Feb 14, 2017
Fabrication methods facilitating integration of different device architectures
GLOBALFOUNDRIES INC4 citations73
US9087720B1Jul 21, 2015
Methods for forming FinFETs with reduced series resistance
GLOBALFOUNDRIES INC5 citations73
US10056468B2Aug 21, 2018
Source/drain parasitic capacitance reduction in FinFET-based semiconductor structure having tucked fins
GLOBALFOUNDRIES INC3 citations71
US9543297B1Jan 10, 2017
Fin-FET replacement metal gate structure and method of manufacturing the same
GLOBALFOUNDRIES INC5 citations71
US9484417B1Nov 1, 2016
Methods of forming doped transition regions of transistor structures
GLOBALFOUNDRIES INC2 citations63
US10243059B2Mar 26, 2019
Source/drain parasitic capacitance reduction in FinFET-based semiconductor structure having tucked fins
GLOBALFOUNDRIES INC1 citations60
US10424584B2Sep 24, 2019
Semiconductor memory devices having an undercut source/drain region
GLOBALFOUNDRIES INC0 citations52
US10290654B2May 14, 2019
Circuit structures with vertically spaced transistors and fabrication methods
GLOBALFOUNDRIES INC0 citations52
US10157927B2Dec 18, 2018
Semiconductor memory devices having an undercut source/drain region
GLOBALFOUNDRIES INC0 citations52
US9601512B2Mar 21, 2017
SOI-based semiconductor device with dynamic threshold voltage
GLOBALFOUNDRIES INC0 citations52
US8846476B2Sep 30, 2014
Methods of forming multiple N-type semiconductor devices with different threshold voltages on a semiconductor substrate
GLOBALFOUNDRIES INC1 citations52
US10483172B2Nov 19, 2019
Transistor device structures with retrograde wells in CMOS applications
GLOBALFOUNDRIES INC0 citations49
US9852954B2Dec 26, 2017
Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structures
GLOBALFOUNDRIES INC0 citations49
US9209181B2Dec 8, 2015
Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structures
GLOBALFOUNDRIES INC0 citations49
US10249616B2Apr 2, 2019
Methods of forming a resistor structure between adjacent transistor gates on an integrated circuit product and the resulting devices
GLOBALFOUNDRIES INC0 citations42
INFINEON TECHNOLOGIES AG
11 patentsUS7785946B2Aug 31, 2010
Integrated circuits and methods of design and manufacture thereof
INFINEON TECHNOLOGIES AG30 citations96
US7737009B2Jun 15, 2010
Method of implanting a non-dopant atom into a semiconductor device
INFINEON TECHNOLOGIES AG16 citations84
US7449374B2Nov 11, 2008
Methods of manufacturing semiconductor devices with rotated substrates
INFINEON TECHNOLOGIES AG5 citations74
US9767244B2Sep 19, 2017
Integrated circuits and methods of design and manufacture thereof
INFINEON TECHNOLOGIES AG2 citations73
US10089430B2Oct 2, 2018
Integrated circuits and methods of design and manufacture thereof
INFINEON TECHNOLOGIES AG0 citations52
US9917191B2Mar 13, 2018
Semiconductor devices and methods of manufacture thereof
INFINEON TECHNOLOGIES AG0 citations52
US9324707B2Apr 26, 2016
Integrated circuits and methods of design and manufacture thereof
INFINEON TECHNOLOGIES AG0 citations52
US7947606B2May 24, 2011
Methods of forming conductive features and structures thereof
INFINEON TECHNOLOGIES AG0 citations52
US7820518B2Oct 26, 2010
Transistor fabrication methods and structures thereof
INFINEON TECHNOLOGIES AG0 citations52
US7892939B2Feb 22, 2011
Threshold voltage consistency and effective width in same-substrate device groups
INFINEON TECHNOLOGIES AG0 citations51
US7776726B2Aug 17, 2010
Semiconductor devices and methods of manufacture thereof
INFINEON TECHNOLOGIES AG0 citations45
SAMSUNG ELECTRONICS CO LTD
3 patentsUS7501651B2Mar 10, 2009
Test structure of semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations63
US8012821B2Sep 6, 2011
Semiconductor embedded resistor generation
SAMSUNG ELECTRONICS CO LTD3 citations60
US7317204B2Jan 8, 2008
Test structure of semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations60