P

Inventor

ELLER MANFRED

US46 patents
⚠️ This page may combine multiple inventors who share the name “ELLER MANFRED”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES INC

25 patents
US9576952B2Feb 21, 2017

Integrated circuits with varying gate structures and fabrication methods

GLOBALFOUNDRIES INC421 citations98
US9362180B2Jun 7, 2016

Integrated circuit having multiple threshold voltages

GLOBALFOUNDRIES INC425 citations98
US9082698B1Jul 14, 2015

Methods to improve FinFet semiconductor device behavior using co-implantation under the channel region

GLOBALFOUNDRIES INC30 citations91
US10083971B1Sep 25, 2018

Vertical SRAM structure with cross-coupling contacts penetrating through common gates to bottom S/D metal contacts

GLOBALFOUNDRIES INC14 citations84
US9734897B1Aug 15, 2017

SRAM bitcell structures facilitating biasing of pass gate transistors

GLOBALFOUNDRIES INC7 citations84
US9455201B2Sep 27, 2016

Integration method for fabrication of metal gate based multiple threshold voltage devices and circuits

GLOBALFOUNDRIES INC18 citations83
US10529724B2Jan 7, 2020

Method of manufacturing a vertical SRAM with cross-coupled contacts penetrating through common gate structures

GLOBALFOUNDRIES INC2 citations73
US10147802B2Dec 4, 2018

FINFET circuit structures with vertically spaced transistors and fabrication methods

GLOBALFOUNDRIES INC2 citations73
US9824748B1Nov 21, 2017

SRAM bitcell structures facilitating biasing of pull-up transistors

GLOBALFOUNDRIES INC5 citations73
US9799661B1Oct 24, 2017

SRAM bitcell structures facilitating biasing of pull-down transistors

GLOBALFOUNDRIES INC2 citations73
US9570586B2Feb 14, 2017

Fabrication methods facilitating integration of different device architectures

GLOBALFOUNDRIES INC4 citations73
US9087720B1Jul 21, 2015

Methods for forming FinFETs with reduced series resistance

GLOBALFOUNDRIES INC5 citations73
US10056468B2Aug 21, 2018

Source/drain parasitic capacitance reduction in FinFET-based semiconductor structure having tucked fins

GLOBALFOUNDRIES INC3 citations71
US9543297B1Jan 10, 2017

Fin-FET replacement metal gate structure and method of manufacturing the same

GLOBALFOUNDRIES INC5 citations71
US9484417B1Nov 1, 2016

Methods of forming doped transition regions of transistor structures

GLOBALFOUNDRIES INC2 citations63
US10243059B2Mar 26, 2019

Source/drain parasitic capacitance reduction in FinFET-based semiconductor structure having tucked fins

GLOBALFOUNDRIES INC1 citations60
US10424584B2Sep 24, 2019

Semiconductor memory devices having an undercut source/drain region

GLOBALFOUNDRIES INC0 citations52
US10290654B2May 14, 2019

Circuit structures with vertically spaced transistors and fabrication methods

GLOBALFOUNDRIES INC0 citations52
US10157927B2Dec 18, 2018

Semiconductor memory devices having an undercut source/drain region

GLOBALFOUNDRIES INC0 citations52
US9601512B2Mar 21, 2017

SOI-based semiconductor device with dynamic threshold voltage

GLOBALFOUNDRIES INC0 citations52
US8846476B2Sep 30, 2014

Methods of forming multiple N-type semiconductor devices with different threshold voltages on a semiconductor substrate

GLOBALFOUNDRIES INC1 citations52
US10483172B2Nov 19, 2019

Transistor device structures with retrograde wells in CMOS applications

GLOBALFOUNDRIES INC0 citations49
US9852954B2Dec 26, 2017

Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structures

GLOBALFOUNDRIES INC0 citations49
US9209181B2Dec 8, 2015

Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structures

GLOBALFOUNDRIES INC0 citations49
US10249616B2Apr 2, 2019

Methods of forming a resistor structure between adjacent transistor gates on an integrated circuit product and the resulting devices

GLOBALFOUNDRIES INC0 citations42

INFINEON TECHNOLOGIES AG

11 patents

SAMSUNG ELECTRONICS CO LTD

3 patents

HAFFNER HENNING

2 patents

IBM

1 patent

ELLER MANFRED

1 patent

ALVAREZ DAVID

1 patent

HAN JIN-PING

1 patent

SCHIML THOMAS

1 patent