Inventor
KIM KEUNNAM
KR54 patents
⚠️ This page may combine multiple inventors who share the name “KIM KEUNNAM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
47 patentsUS7394116B2Jul 1, 2008
Semiconductor device including a multi-channel fin field effect transistor including protruding active portions and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD96 citations95
US10468350B2Nov 5, 2019
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD12 citations92
US11723191B2Aug 8, 2023
Semiconductor memory devices having protruding contact portions
SAMSUNG ELECTRONICS CO LTD8 citations85
US10978397B2Apr 13, 2021
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD5 citations84
US7863683B2Jan 4, 2011
Fin field effect transistor and method for forming the same
SAMSUNG ELECTRONICS CO LTD12 citations84
US9607994B2Mar 28, 2017
Methods of fabricating semiconductor devices
SAMSUNG ELECTRONICS CO LTD8 citations83
US10714478B2Jul 14, 2020
Semiconductor devices with peripheral gate structures
SAMSUNG ELECTRONICS CO LTD5 citations82
US10211091B2Feb 19, 2019
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD6 citations82
US11805639B2Oct 31, 2023
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD4 citations74
US11133315B2Sep 28, 2021
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US11101283B2Aug 24, 2021
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations73
US10535605B2Jan 14, 2020
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD3 citations73
US9960170B1May 1, 2018
Methods of fabricating memory devices
SAMSUNG ELECTRONICS CO LTD6 citations73
US11282787B2Mar 22, 2022
Semiconductor devices having improved electrical characteristics and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US11100958B2Aug 24, 2021
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US10600791B2Mar 24, 2020
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD4 citations72
US11037930B2Jun 15, 2021
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD4 citations71
US10796950B2Oct 6, 2020
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US10332890B2Jun 25, 2019
Semiconductor memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US10685963B2Jun 16, 2020
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations69
US12302551B2May 13, 2025
Semiconductor memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations63
US11538861B2Dec 27, 2022
Variable resistance memory device
SAMSUNG ELECTRONICS CO LTD0 citations63
US10943782B2Mar 9, 2021
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations63
US10937833B2Mar 2, 2021
Variable resistance memory device
SAMSUNG ELECTRONICS CO LTD0 citations63
US12538477B2Jan 27, 2026
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12532458B2Jan 20, 2026
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12419049B2Sep 16, 2025
Semiconductor memory device including symmetrical channel patterns and wordlines
SAMSUNG ELECTRONICS CO LTD0 citations62
US12279415B2Apr 15, 2025
Method of fabricating semiconductor memory device having protruding contact portion
SAMSUNG ELECTRONICS CO LTD0 citations62
US12052855B2Jul 30, 2024
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11776909B2Oct 3, 2023
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11587929B2Feb 21, 2023
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11929324B2Mar 12, 2024
Semiconductor devices having improved electrical characteristics and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11917815B2Feb 27, 2024
Semiconductor and manufacturing method of the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11658117B2May 23, 2023
Semiconductor devices having improved electrical characteristics and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11646225B2May 9, 2023
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11616066B2Mar 28, 2023
Semiconductor device and manufacturing method of the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11088143B2Aug 10, 2021
Semiconductor and manufacturing method of the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12237265B2Feb 25, 2025
Methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations60
US11728167B2Aug 15, 2023
Method of forming patterns, integrated circuit device, and method of manufacturing the integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations60
US11688687B2Jun 27, 2023
Semiconductor devices having landing pad patterns and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11521977B2Dec 6, 2022
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations60
US11502082B2Nov 15, 2022
Semiconductor devices with peripheral gate structures
SAMSUNG ELECTRONICS CO LTD0 citations60
US11270885B2Mar 8, 2022
Method of forming patterns, integrated circuit device, and method of manufacturing the integrated circuit device
SAMSUNG ELECTRONICS CO LTD1 citations60
US12328866B2Jun 10, 2025
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations58
US11706910B2Jul 18, 2023
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD1 citations58
US12501607B2Dec 16, 2025
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US12543320B2Feb 3, 2026
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations50
KIM KEUNNAM
2 patentsRYU HO-IN
1 patentShowing the top 50 of 54 patents by PatentIndex Score.