P

Inventor

HAN SUNGHEE

KR46 patents
⚠️ This page may combine multiple inventors who share the name “HAN SUNGHEE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

31 patents
US10784272B2Sep 22, 2020

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD25 citations94
US10468414B2Nov 5, 2019

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD17 citations86
US11665883B2May 30, 2023

Semiconductor memory device having spacer capping pattern disposed between burried dielectic pattern and an air gap and method of fabricating same

SAMSUNG ELECTRONICS CO LTD10 citations84
US9508649B2Nov 29, 2016

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD7 citations84
US10461153B2Oct 29, 2019

Semiconductor memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD11 citations82
US11805639B2Oct 31, 2023

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD4 citations74
US11844212B2Dec 12, 2023

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD1 citations73
US11355509B2Jun 7, 2022

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD2 citations73
US9831172B2Nov 28, 2017

Semiconductor devices having expanded recess for bit line contact

SAMSUNG ELECTRONICS CO LTD5 citations73
US11282787B2Mar 22, 2022

Semiconductor devices having improved electrical characteristics and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations72
US11404538B2Aug 2, 2022

Semiconductor memory device and method of fabricating same

SAMSUNG ELECTRONICS CO LTD5 citations71
US11322499B2May 3, 2022

Semiconductor device including storage node electrode including step and method of manufacturing the semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations71
US10103030B2Oct 16, 2018

Methods of fabricating semiconductor devices

SAMSUNG ELECTRONICS CO LTD2 citations68
US11574915B2Feb 7, 2023

Semiconductor device including insulating patterns and method for forming the same

SAMSUNG ELECTRONICS CO LTD4 citations66
US12207456B2Jan 21, 2025

Method of forming an integrated circuit devices having buried word lines

SAMSUNG ELECTRONICS CO LTD0 citations62
US11889681B2Jan 30, 2024

Integrated circuit devices having buried word lines therein

SAMSUNG ELECTRONICS CO LTD0 citations62
US11600620B2Mar 7, 2023

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11600570B2Mar 7, 2023

Semiconductor memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD1 citations62
US11270933B2Mar 8, 2022

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD1 citations62
US11043498B1Jun 22, 2021

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11929324B2Mar 12, 2024

Semiconductor devices having improved electrical characteristics and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11917815B2Feb 27, 2024

Semiconductor and manufacturing method of the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11889682B2Jan 30, 2024

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD0 citations61
US11658117B2May 23, 2023

Semiconductor devices having improved electrical characteristics and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11616066B2Mar 28, 2023

Semiconductor device and manufacturing method of the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11610891B2Mar 21, 2023

Semiconductor device including storage node electrode including step and method of manufacturing the semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations61
US11088143B2Aug 10, 2021

Semiconductor and manufacturing method of the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11728167B2Aug 15, 2023

Method of forming patterns, integrated circuit device, and method of manufacturing the integrated circuit device

SAMSUNG ELECTRONICS CO LTD0 citations60
US11270885B2Mar 8, 2022

Method of forming patterns, integrated circuit device, and method of manufacturing the integrated circuit device

SAMSUNG ELECTRONICS CO LTD1 citations60
US12114475B2Oct 8, 2024

Integrated circuit device

SAMSUNG ELECTRONICS CO LTD1 citations57
US11688779B2Jun 27, 2023

Semiconductor memory device and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations50

LG ELECTRONICS INC

14 patents

JUNG HYEONOK

1 patent