Inventor
LIN HON-JARN
TW21 patents
⚠️ This page may combine multiple inventors who share the name “LIN HON-JARN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
20 patentsUS10163505B2Dec 25, 2018
RRAM array with current limiting element
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations84
US10163503B2Dec 25, 2018
RRAM array with current limiting element to enable efficient forming operation
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US11961546B2Apr 16, 2024
MRAM reference current
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11783870B2Oct 10, 2023
Sense amplifier
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11367468B1Jun 21, 2022
Sense amplifier
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11081155B2Aug 3, 2021
MRAM reference current
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10510411B2Dec 17, 2019
RRAM array with current limiting element
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10319423B2Jun 11, 2019
Memory device with a low-current reference circuit
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9754639B2Sep 5, 2017
Memory device and reference circuit thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10157654B2Dec 18, 2018
Memory device and reference circuit thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12354635B2Jul 8, 2025
MRAM reference current
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12205632B2Jan 21, 2025
Memory cell and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12165732B2Dec 10, 2024
Sense amplifier
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11973502B2Apr 30, 2024
Latch
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11848040B2Dec 19, 2023
Memory device and reference circuit thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11641193B2May 2, 2023
Latch
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11469745B2Oct 11, 2022
Latch
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11211106B2Dec 28, 2021
Memory device and reference circuit thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11250908B2Feb 15, 2022
Segmented reference trimming for memory arrays
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10515680B2Dec 24, 2019
Memory device and reference circuit thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52