Inventor
KABIR HUMAYUN
US19 patents
⚠️ This page may combine multiple inventors who share the name “KABIR HUMAYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NXP USA INC
13 patentsUS12327778B2Jun 10, 2025
Transistor die with primary and ancillary transistor elements
NXP USA INC2 citations73
US11430874B2Aug 30, 2022
Semiconductor device with a crossing region
NXP USA INC4 citations72
US12159845B2Dec 3, 2024
Transistor with integrated passive components
NXP USA INC0 citations62
US11387169B2Jul 12, 2022
Transistor with I/O ports in an active area of the transistor
NXP USA INC0 citations62
US12237257B2Feb 25, 2025
Compact transistor utilizing shield structure arrangement
NXP USA INC0 citations60
US11177207B2Nov 16, 2021
Compact transistor utilizing shield structure arrangement
NXP USA INC0 citations60
US12119300B2Oct 15, 2024
Transistor circuits with shielded reference transistors
NXP USA INC1 citations59
US12599008B2Apr 7, 2026
Transistor with source manifold in non-active die region
NXP USA INC0 citations51
US12349433B2Jul 1, 2025
Transistors with self-aligned source-connected field plates
NXP USA INC0 citations51
US10672703B2Jun 2, 2020
Transistor with shield structure, packaged device, and method of fabrication
NXP USA INC0 citations51
US11804527B2Oct 31, 2023
Transistor with center fed gate
NXP USA INC0 citations50
US11108361B2Aug 31, 2021
Integrated multiple-path power amplifier with interdigitated transistors
NXP USA INC0 citations49
US11430743B1Aug 30, 2022
Transistor with shield system including multilayer shield structure arrangement
NXP USA INC0 citations48
ABB SCHWEIZ AG
3 patentsUS11585776B2Feb 21, 2023
Chlorine species sensing using pseudo-graphite
ABB SCHWEIZ AG5 citations69
US11415539B2Aug 16, 2022
Chemical oxygen demand sensing using pseudo-graphite
ABB SCHWEIZ AG0 citations58
US11415540B2Aug 16, 2022
Technologies using nitrogen-functionalized pseudo-graphite
ABB SCHWEIZ AG0 citations54
NXP BV
2 patentsUS12336254B2Jun 17, 2025
Semiconductor device with conductive elements formed over dielectric layers and method of fabrication therefor
NXP BV0 citations61
US11923424B2Mar 5, 2024
Semiconductor device with conductive elements formed over dielectric layers and method of fabrication therefor
NXP BV0 citations61