Inventor

YAN TIANHONG

US70 patents

⚠️ This page may combine multiple inventors who share the name “YAN TIANHONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YAN TIANHONG

SANDISK 3D LLC

Reverse set with current limit for non-volatile storage

Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture

Continuous programming of non-volatile memory

Setting channel voltages of adjustable resistance bit line structures using dummy word lines

Side wall bit line structures

Vertical cross point reram forming method

Multiple layer forming scheme for vertical cross point reram

Non-volatile 3D memory with cell-selectable word line decoding

Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereof

Reversible polarity decoder circuit

Apparatus and methods for sensing hard bit and soft bits

Three dimensional memory system with column pipeline

Vertical cross point reram forming method

Shared-gate vertical-TFT for vertical bit line array

Controlling adjustable resistance bit lines connected to word line combs

Independent set/reset programming scheme

SUNRISE MEMORY CORP

Three-dimensional vertical NOR flash thin-film transistor strings

Three-dimensional vertical nor flash thin-film transistor strings

Vertical thing-film transistor and application as bit-line connector for 3-dimensional memory arrays

High capacity memory circuit with low effective latency

Process for forming a vertical thin-film transistor that serves as a connector to a bit-line of a 3-dimensional memory array

High capacity memory circuit with low effective latency

Vertical thin-film transistor and application as bit-line connector for 3-dimensional memory arrays

Three-dimensional vertical nor flash thin-film transistor strings

Vertical thin-film transistor and application as bit-line connector for 3-dimensional memory arrays

SANDISK TECHNOLOGIES INC

Reading resistive random access memory based on leakage current

Dual polarity read operation

Methods for programming ReRAM devices

Mitigating disturb effects for non-volatile memory

Systems and methods of shaping data

Disturb condition detection for a resistive random access memory

YAN TIANHONG

Continuous programming of non-volatile memory

Memory system with sectional data lines

Non-volatile storage system with dual block programming

Three dimensional memory system with page of data across word lines

Three dimensional memory system with intelligent select circuit

CROSSBAR INC

Read operation with data latch and signal termination for 1TNR memory array

State change detection for two-terminal memory during application of a state-changing stimulus

Read operation with data latch and signal termination for 1TNR memory array

State change detection for two-terminal memory utilizing current mirroring circuitry

AUCMOS TECH USA INC

Ferroelectric memory cell without a plate line

Non-volatile FeSRAM cell capable of non-destructive read operations

Ferroelectric random access memory (FeRAM) array with segmented plate lines that are electrically-isolated from each other

SCHEUERLEIN ROY E

Capacitive discharge method for writing to non-volatile memory

Reverse set with current limit for non-volatile storage

Three dimensional non-volatile storage with multi block row selection

SANDISK TECHNOLOGIES LLC

Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture

Memory hole bit line structures

SAMACHISA GEORGE

Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereof

FASOLI LUCA G

Smart detection circuit for writing to non-volatile storage