Inventor
SCHWALKE UDO
DE28 patents
⚠️ This page may combine multiple inventors who share the name “SCHWALKE UDO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SIEMENS AG
26 patentsUS5700712ADec 23, 1997
Method for manufacturing an insulating trench in an SOI substrate for smartpower technologies
SIEMENS AG80 citations96
US5445988AAug 29, 1995
Method for manufacturing a trench in a substrate for use in smart-power technology
SIEMENS AG82 citations96
US5416041AMay 16, 1995
Method for producing an insulating trench in an SOI substrate
SIEMENS AG66 citations96
US5998271ADec 7, 1999
Method of producing an MOS transistor
SIEMENS AG29 citations92
US5965926AOct 12, 1999
Circuit structure having at least one MOS transistor and method for its production
SIEMENS AG35 citations92
US5932919AAug 3, 1999
MOSFETs with improved short channel effects
SIEMENS AG19 citations92
US5882965AMar 16, 1999
Process for manufacturing an integrated CMOS circuit
SIEMENS AG24 citations92
US5496765AMar 5, 1996
Method for manufacturing an insulating trench in a substrate for smart-power technologies
SIEMENS AG37 citations92
US5473181ADec 5, 1995
Integrated circuit arrangement having at least one power component and low-voltage components
SIEMENS AG40 citations92
US5780929AJul 14, 1998
Formation of silicided junctions in deep submicron MOSFETS by defect enhanced CoSi2 formation
SIEMENS AG21 citations91
US5726094AMar 10, 1998
Process for producing a diffusion region adjacent to a recess in a substrate
SIEMENS AG31 citations91
US5344793ASep 6, 1994
Formation of silicided junctions in deep sub-micron MOSFETs by defect enhanced CoSi2 formation
SIEMENS AG33 citations91
US5439831AAug 8, 1995
Low junction leakage MOSFETs
SIEMENS AG20 citations90
US5164333ANov 17, 1992
Method for manufacturing a multi-layer gate electrode for a mos transistor
SIEMENS AG36 citations90
US5268317ADec 7, 1993
Method of forming shallow junctions in field effect transistors
SIEMENS AG34 citations89
US5190888AMar 2, 1993
Method for producing a doped polycide layer on a semiconductor substrate
SIEMENS AG35 citations86
US6037196AMar 14, 2000
Process for producing an integrated circuit device with at least one MOS transistor
SIEMENS AG18 citations84
US6380015B1Apr 30, 2002
MOSFETs with improved short channel effects and method of making the same
SIEMENS AG8 citations74
US6057211AMay 2, 2000
Method for manufacturing an integrated circuit arrangement
SIEMENS AG9 citations74
US5913115AJun 15, 1999
Method for producing a CMOS circuit
SIEMENS AG7 citations74
US5882964AMar 16, 1999
Process for the production of an integrated CMOS circuit
SIEMENS AG11 citations74
US5528053AJun 18, 1996
Thin-film transistor and method for the manufacture thereof
SIEMENS AG8 citations74
US5872382AFeb 16, 1999
Low junction leakage mosfets with particular sidewall spacer structure
SIEMENS AG15 citations71
US5602410AFeb 11, 1997
Off-state gate-oxide field reduction in CMOS
SIEMENS AG7 citations70
US5470782ANov 28, 1995
Method for manufacturing an integrated circuit arrangement
SIEMENS AG16 citations67
US5817570AOct 6, 1998
Semiconductor structure for an MOS transistor and method for fabricating the semiconductor structure
SIEMENS AG1 citations52