Inventor
TAKATA YOSHIFUMI
JP16 patents
⚠️ This page may combine multiple inventors who share the name “TAKATA YOSHIFUMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
11 patentsUS6476491B2Nov 5, 2002
Semiconductor device having a multilayer wiring structure and pad electrodes protected from corrosion and method for fabricating the same
MITSUBISHI ELECTRIC CORP75 citations96
US6448658B2Sep 10, 2002
Semiconductor device having improved interconnection-wiring structures
MITSUBISHI ELECTRIC CORP41 citations92
US5475267ADec 12, 1995
Multilayer interconnection structure for a semiconductor device
MITSUBISHI ELECTRIC CORP29 citations92
US5313100AMay 17, 1994
Multilayer interconnection structure for a semiconductor device
MITSUBISHI ELECTRIC CORP37 citations92
US6278187B1Aug 21, 2001
Semiconductor device having an improved interlayer conductor connections and a manufacturing method thereof
MITSUBISHI ELECTRIC CORP11 citations73
US5561084AOct 1, 1996
Method of making an interconnection structure of a semiconductor device
MITSUBISHI ELECTRIC CORP8 citations73
US5442238AAug 15, 1995
Interconnection structure of a semiconductor device
MITSUBISHI ELECTRIC CORP12 citations73
US4962061AOct 9, 1990
Method for manufacturing a multilayer wiring structure employing metal fillets at step portions
MITSUBISHI ELECTRIC CORP17 citations73
US6500675B2Dec 31, 2002
Manufacturing method of semiconductor device having capacitive element
MITSUBISHI ELECTRIC CORP10 citations70
US5712140AJan 27, 1998
Method of manufacturing interconnection structure of a semiconductor device
MITSUBISHI ELECTRIC CORP4 citations62
US6319812B1Nov 20, 2001
Method of manufacturing a semiconductor device
MITSUBISHI ELECTRIC CORP0 citations50
RENESAS TECH CORP
3 patentsUS6727170B2Apr 27, 2004
Semiconductor device having an improved interlayer conductor connections and a manufacturing method thereof
RENESAS TECH CORP11 citations73
US6890857B2May 10, 2005
Semiconductor device having a multilayer wiring structure and pad electrodes protected from corrosion, and method for fabricating the same
RENESAS TECH CORP2 citations62
US6777738B2Aug 17, 2004
Semiconductor integrated circuit
RENESAS TECH CORP0 citations41