Inventor
PARSA ROOZBEH
US38 patents
⚠️ This page may combine multiple inventors who share the name “PARSA ROOZBEH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
22 patentsUS10024929B2Jul 17, 2018
Vapor cell structure having cavities connected by channels for micro-fabricated atomic clocks, magnetometers, and other devices
TEXAS INSTRUMENTS INC47 citations98
US9601225B2Mar 21, 2017
Multiple-cavity vapor cell structure for micro-fabricated atomic clocks, magnetometers, and other devices
TEXAS INSTRUMENTS INC43 citations98
US9568565B2Feb 14, 2017
Vapor cell structure having cavities connected by channels for micro-fabricated atomic clocks, magnetometers, and other devices
TEXAS INSTRUMENTS INC54 citations98
US9343447B2May 17, 2016
Optically pumped sensors or references with die-to-package cavities
TEXAS INSTRUMENTS INC43 citations98
US9293422B1Mar 22, 2016
Optoelectronic packages having magnetic field cancelation
TEXAS INSTRUMENTS INC35 citations98
US9169974B2Oct 27, 2015
Multiple-cavity vapor cell structure for micro-fabricated atomic clocks, magnetometers, and other devices
TEXAS INSTRUMENTS INC49 citations98
US9429918B2Aug 30, 2016
Atomic clocks and magnetometers with vapor cells having condensation sites in fluid communication with a cavity to hold a vapor condensation away from an optical path
TEXAS INSTRUMENTS INC42 citations94
US9543735B2Jan 10, 2017
Optoelectronic packages having through-channels for routing and vacuum
TEXAS INSTRUMENTS INC1 citations63
US11592502B2Feb 28, 2023
Component adjustment in a signal path of an integrated sensor
TEXAS INSTRUMENTS INC0 citations62
US11294002B2Apr 5, 2022
Concave cavity for integrated microfabricated sensor
TEXAS INSTRUMENTS INC0 citations60
US9461439B2Oct 4, 2016
Optoelectronic packages having magnetic field cancelation
TEXAS INSTRUMENTS INC0 citations52
US10712401B2Jul 14, 2020
Concave cavity for integrated microfabricated sensor
TEXAS INSTRUMENTS INC0 citations50
US10665735B2May 26, 2020
Micro-fabricated atomic clock structure and method of forming the atomic clock structure
TEXAS INSTRUMENTS INC0 citations50
US10067201B2Sep 4, 2018
Wiring layout to reduce magnetic field
TEXAS INSTRUMENTS INC0 citations50
US9899794B2Feb 20, 2018
Optoelectronic package
TEXAS INSTRUMENTS INC1 citations50
US10409227B2Sep 10, 2019
Temperature gradient in microfabricated sensor cavity
TEXAS INSTRUMENTS INC0 citations48
US10295488B2May 21, 2019
Sensor fluid reservoirs for microfabricated sensor cells
TEXAS INSTRUMENTS INC0 citations48
US11193990B2Dec 7, 2021
Integrated microfabricated alkali vapor cell sensor with reduced heading error
TEXAS INSTRUMENTS INC0 citations43
US10393826B2Aug 27, 2019
Extended signal paths in microfabricated sensors
TEXAS INSTRUMENTS INC0 citations42
US9454135B2Sep 27, 2016
Manufactureable long cell with enhanced sensitivity and good mechanical strength
TEXAS INSTRUMENTS INC0 citations42
US10591872B2Mar 17, 2020
Microfabricated atomic clocks and magnetometers utilizing side recesses
TEXAS INSTRUMENTS INC0 citations38
US10718661B2Jul 21, 2020
Integrated microfabricated vapor cell sensor with transparent body having two intersecting signal paths
TEXAS INSTRUMENTS INC0 citations33
NAT SEMICONDUCTOR CORP
8 patentsUS7701754B1Apr 20, 2010
Multi-state electromechanical memory cell
NAT SEMICONDUCTOR CORP9 citations82
US7754986B1Jul 13, 2010
Mechanical switch that reduces the effect of contact resistance
NAT SEMICONDUCTOR CORP7 citations73
US7969790B2Jun 28, 2011
Method of erasing an NVM cell that utilizes a gated diode
NAT SEMICONDUCTOR CORP1 citations63
US7602267B1Oct 13, 2009
MEMS actuator and relay with horizontal actuation
NAT SEMICONDUCTOR CORP2 citations62
US7978519B2Jul 12, 2011
Method of reading an NVM cell that utilizes a gated diode
NAT SEMICONDUCTOR CORP0 citations52
US7859912B2Dec 28, 2010
Mid-size NVM cell and array utilizing gated diode for low current programming
NAT SEMICONDUCTOR CORP0 citations52
US7598829B1Oct 6, 2009
MEMS actuator and relay with vertical actuation
NAT SEMICONDUCTOR CORP1 citations52
US7425741B1Sep 16, 2008
EEPROM structure with improved data retention utilizing biased metal plate and conductive layer exclusion
NAT SEMICONDUCTOR CORP1 citations51